2013
DOI: 10.1021/jp4072394
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On Charge Carrier Recombination in Sb2S3 and Its Implication for the Performance of Solar Cells

Abstract: International audienceSb2S3 is widely considered to be an attractive photovoltaic material based on abundant, nontoxic elements. However, the maximum efficiency reported for solar cells based on this semiconductor does not exceed 6.5%. We have measured light intensity-dependent J-V curves, transient microwave photoconductivity, steady-state photocurrent grating, modulated photocurrent, and photoconductivity on Sb2S3-based samples. All techniques converge toward the same observation: the main recombination rout… Show more

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Cited by 55 publications
(55 citation statements)
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“…The main disadvantage of this method is that it is difficult to prevent the formation of some antimony oxide during the Sb 2 S 3 deposition . Although electronic states within the bandgap mean that recombination within Sb 2 S 3 is relatively high and diffusion lengths are currently limited , it remains an interesting photovoltaic material because it is stable, inorganic and it can be deposited in continuous and uniform thin layers.…”
Section: Introductionmentioning
confidence: 99%
“…The main disadvantage of this method is that it is difficult to prevent the formation of some antimony oxide during the Sb 2 S 3 deposition . Although electronic states within the bandgap mean that recombination within Sb 2 S 3 is relatively high and diffusion lengths are currently limited , it remains an interesting photovoltaic material because it is stable, inorganic and it can be deposited in continuous and uniform thin layers.…”
Section: Introductionmentioning
confidence: 99%
“…Based on the literature research, we find that the electrical hysteresis frequently occurs in the materials that have the ambipolar transport feature, for example, PbSe and lead halide perovskite (CH 3 NH 3 PbI 3 ) ,. Similarly, Sb 2 S 3 has been reported to exhibit ambipolar transport behavior ,. In particular, the amorphous semiconductors possess high‐density of locate states in the electronic band structures, which may lead to the trapping and detrapping and the successive unbalanced distribution of electrons and holes, for instance, in the amorphous a‐Sb 2 S 3 colloids.…”
Section: Resultsmentioning
confidence: 93%
“…[4b, 12] In addition, the bandgap (1.7-1.8 eV) is perfectly suitable for top subcells in tandem solar cells coupled with al ow bandgap bottom subcells such as silicon or CIGSt oo vercomet he efficiency limitation of silicon and CIGSsolar cells. [13] Because of its carrierd iffusion length in theh undreds of nanometers, [14] Sb 2 S 3 can be appliedi ne ither as ensitized device structure or planarh eterojunction solar cells. Regardless of the device configuration, obtainingahigh powerconversion efficiency (PCE) relies on the fabrication of ah ighq uality absorber materials.…”
Section: Introductionmentioning
confidence: 99%