On the Hopping and Band Conductivity in Molecular-Beam Epitaxial Low-Temperature Grown GaAs

Morvič, M.; Betko, J.; Novák, Josef; Kordoš, P.; Förster, A.

doi:10.1002/(sici)1521-3951(199801)205:1<125::aid-pssb125>3.0.co;2-b

Cited by 7 publications

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“…Therefore, first we have focused on an influence of additional ionisation of deep-level states in LT GaAs on a conductivity thereof.Fig. 1shows a temperature dependence of conductance of the CLM test structure made of LT/SI GaAs layered system measured in the temperature range of 250 -450 K. Both undoped and Be-doped LT GaAs exhibit two distinct regions with the standard band conduction mechanism and hopping conduction typical for LT GaAs[9]. To analyse observed dependence we fitted data with simplified equation from Ref.…”

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Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range

Darmo

Schaffer²,

Förster³

et al.

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat.

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confidence: 99%

Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range

Darmo

Schaffer²,

Förster³

et al.

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat.

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Fabrication of a‐SiGe structure by rf sputtering for solar cell purposes

Serényi

Betko

Nemcsics³

et al. 2003

phys. stat. sol. (c)

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The deposition and electronic properties of a-SiGe and a-Si layers for thin-film solar cell applications are discussed. Technological parameters were developed for good layer quality of amorphous material. An inverse relation was discovered between the resistivity and the flow of hydrogen without annealing after deposition. Antimony was found to be a good doping material.1. Introduction Radio frequency (rf) sputtering is an efficient process for preparing amorphous semiconductor and metal layers on different sheets as substrate materials [1,2]. In this work we discuss the deposition process and electronic properties of a-SiGe and a-Si layers for use in thin-film solar cell applications. We have tested several substrate materials for thin-film deposition. The substrates used were Si wafer with oxide isolation, glass and a special plastic foil. We have investigated the sticking properties of the thin film for different treatment of the surface of the various substrate materials.The building in of the hydrogen and of the dopant materials (7N-Al, 5N-Sb) was investigated with different target materials and with different flows of hydrogen while the deposition and the annealing parameters were changed. The layer thickness was determined by alpha-step profiling. The Ge content was determined by Rutherford backscattering (RBS) measurements. The electrical parameters were determined by temperature-dependent van der Pauw measurements.

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