Open loop real-time power electronic device junction temperature estimation

Musallam, M.; Acarnley, P.P.; Johnson, C.M.; Pritchard, L.S.; Pickert, Volker

doi:10.1109/isie.2004.1571957

Cited by 16 publications

(7 citation statements)

References 1 publication

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“…In principle, the thermal resistance of voids is 32 times greater than solder for the same size while their thermal capacitances are similar. Furthermore, the thermal capacitance of solder layers (0.004 J/K) is much smaller than that of the silicon substrate layer (0.0729 J/K) [4] and even smaller than that of the silicon active device layer (0.0044 J/K). As a result, the thermal capacitance of solder layers is considered less sensitive to void growth in the course of device aging.…”

Section: B Update On the Thermal Modelmentioning

confidence: 97%

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Chen¹,

Pickert

et al. 2014

IEEE Trans. Device Mater. Relib.

168

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Abstract-This paper presents a novel real-time power device temperature estimation method which monitors the power MOSFET's junction temperature shift arising from thermal aging effects and incorporates the updated electrothermal models of power modules into digital controllers. Currently, the real-time estimator is emerging as an important tool for active control of device junction temperature as well as on-line health monitoring for power electronic systems but its thermal model fails to address the device's ongoing degradation. Because of a mismatch of coefficients of thermal expansion between layers of power devices, repetitive thermal cycling will cause cracks, voids and even delamination within the device components, especially in the solder and thermal grease layers. Consequently, the thermal resistance of power devices will increase, making it possible to use thermal resistance (and junction temperature) as key indicators for condition monitoring and control purposes. In this paper, the predicted device temperature via threshold voltage measurements is compared with the real-time estimated ones and the difference is attributed to the aging of the device. The thermal models in digital controllers are frequently updated to correct the shift caused by thermal aging effects. Experimental results on three power MOSFETs confirm that the proposed methodologies are effective to incorporate the thermal aging effects in the power device temperature estimator with good accuracy. The developed adaptive technologies can be applied to other power devices such as IGBTs and SiC MOSFETs, and have significant economic implications.

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Section: B Update On the Thermal Modelmentioning

confidence: 97%

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Chen¹,

Pickert

et al. 2014

IEEE Trans. Device Mater. Relib.

168

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show abstract

“…The detailed information is that the thermal resistance R 1 and R 2 is mainly related to IGBT module, the thermal resistance R 3 is mainly related to the thermal grease layer and the thermal resistance R 4 is mostly related to the heatsinks layer [25]- [28].…”

Section: B Thermal Analysismentioning

confidence: 99%

Monitoring of the Cooling System via Thermal Parameters

Zheng

Zhang

et al. 2019

IEEE Access

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The cooling system, including the thermal grease, heatsinks, plays an important role in the power converters for its reliable operation. While in the long-term operation situation, the cooling system will degrade with different kinds of failure mechanism of the components and finally result in the damage to the power converters. In this paper, the method was proposed to monitor the thermal network parameters of the cooling system using the cooling curves of junction temperature. By establishing the relationship between the RC parameters of Cauer network and time constants of cooling curves, the thermal parameters about cooling system can be obtained. Experimental tests are performed to verify the accuracy of proposed method. Results indicate the degradation state of the cooling system can be evaluated by monitoring the variation of thermal network parameters of the cooling system. INDEX TERMS Cauer thermal network model, cooling system, thermal network parameters.

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“…Additionally, thermal measurements are usually performed at the surface of the device and therefore the combined thermal response of the materials situated between the junction and the surface of the device has to be sufficiently fast to allow the temperature to reach its peak and cool down within a single period. The measurement of the dynamic temperature variations during operation, allows for more accurate peak temperature readings [15].…”

Section: Introductionmentioning

confidence: 99%

Dynamic Temperature Measurements of a GaN DC–DC Boost Converter at MHz Frequencies

Matei

Urbonas²,

Votsi

et al. 2020

IEEE Trans. Power Electron.

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For reliability predictions, gallium nitride transistors require accurate estimations of the peak operating temperatures within the device. This paper presents a new application of thermoreflectance-based temperature measurements performed on a gallium nitride high electron mobility transistor. The submicron spatial and nanosecond temporal resolutions of the measurement system enables for the first time, the dynamic temperature measurement of a transistor operating up to 5 MHz. The GaN transistor is first biased in class-A and excited with a 1 MHz AC signal to demonstrate the dynamic temperature measurement. The transistor is then incorporated in a 20-40 V DC/DC boost converter to measure the dynamic temperature distributions across the semiconductor die operating under real loading conditions at 1 and 5 MHz switching frequencies. This technique captures the temperature variations that occur during the switching of the transistor and the recorded peak temperatures are 7.4 C higher compared with conventional measurement and simulation approaches. Index Terms-Thermoreflectance measurement, boost converter, gallium nitride, power transistor.

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Open loop real-time power electronic device junction temperature estimation

Cited by 16 publications

References 1 publication

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Monitoring of the Cooling System via Thermal Parameters

Dynamic Temperature Measurements of a GaN DC–DC Boost Converter at MHz Frequencies

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