Optical absorptivity and recombination losses: The limitations imposed by the thickness of absorber layer in CdS/CdTe solar cells

Ellipsometric investigation of S–Te inter-diffusion and its effect on quantum efficiency of CdS/CdTe thin films solar cell

“…6 shows the measured data (symbol) and the best fitted simulation (red line) of sample B 3 . The best simulation adopts some reasonable parameters such as depletion region depth b = 15 nm, diffusion length of minor carriers L = 150 nm (Kosyachenko et al, 2013) and the width of deplete region W = 1200 nm , which quite agree with the measured data. The best simulation indicates that x = 0.15 and y = 0.1.…”

“…Because the long wavelength photons have not been absorbed sufficiently when they pass through the narrow depletion region, the number of light-induced carriers corresponding to long wavelength decreased. Our simple method successfully reveals the main characteristic at the blue absorption edge which is often ignored by other reports (Kosyachenko et al, 2013). As is shown in the inset of Fig.…”

“…Considering that the high absorption coefficient of CdTe allows light to be absorbed by 93% within the thickness of 1 lm (Kosyachenko et al, 2013), it is logical to presume that the back surface of the CdTe layer does not affect the reflection from the glass side. Fig.…”

Advances in nanostructured thin film materials for solar cell applications

“…The increase in the thickness of thin film with the substrate temperature [76] is related with the decrease in sticking coefficient as well as the increase in the density of the film due to crystallization. The absorber layers in PV technology are categorized according to their thickness represented in Figure 8 [77][78][79][80][81]. The thinnest material used in thin film PV technology is CuInSe 2 while the thickest one is c-Si.…”

QUANTUM EFFICIENCY, OPTICAL AND RECOMBINATION LOSSES IN THIN-FILM SOLAR CELLS BASED ON Cu(In,Ga)Se2

“…Відмінності між двома пристроями в основному конструктив-ні, що не має принципового значення з точки зору фізики процесів, що відбуваються. Тому моделі, розроблені для інтерпретації харак-теристик CdTe сонячних елементів, можуть бути застосовані до CIGS пристрою з деякою корекцією [3,4].…”