Optical and electrical characterization of CIGS thin films grown by electrodeposition route

Chihi, Adel; Fethi, Boujmil Mohamed; Bessaı̈s, B.

doi:10.1016/j.ijleo.2016.01.115

Cited by 16 publications

(5 citation statements)

References 31 publications

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“…At% of CIGS films with pure selenium as a source of selenium is 0.67% and with selenium dioxide is 14.67%, so using selenium dioxide as a source of selenium in CIGS solar cells is better than pure selenium. To obtain a good CIGS solar cell, the ratio of Ga/(Ga+In) is 0.1-0.3 because, at that ratio, the defects in the CIGS film are smaller [9]. In Table 3, the Ga/(Ga+In) ratio of pure selenium is 0.067 and SeO2 is 0.106, so it can be seen that the defects in CIGS films using SeO2 are smaller than those of pure selenium.…”

Section: Resultsmentioning

confidence: 99%

“…Which produces a uniform microstructure and good electrical properties, but this technique requires vacuum conditions and always maintains air pressure conditions under certain conditions. Otherwise, non-vacuum methods can be performed at room temperatures, such as electrodeposition [9], spin coating [1], and spray pyrolysis [10]. Among these techniques, electrodeposition is the most preferred method because it is simple, does not require vacuum equipment, thus reducing the cost of production, is stable, and has also been proven to produce CIGS absorbing layers in previous studies [4].…”

Section: Introductionmentioning

confidence: 99%

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Electrodeposition Technique to Fabrication CIGS using Pure Selenium and SeO2 as Selenium Source

Rahmawati

Abadi

Zulaikah

et al. 2022

Mal. J. Fund. Appl. Sci.

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Energy demands are increasing day by day because almost all equipment that supports human activities uses electrical energy. CIGS solar cells are an energy source that is environmentally friendly, renewable, and has high efficiency. Selenium is one of the materials used in making solar cell CIGS. However, researchers often find the problems of this material hard to dissolve compared to other materials (copper, indium, and gallium). Therefore, in this study, pure selenium will be synthesized to produce selenium dioxide (SeO2) as a material for making solar cell CIGS with electrodeposition. The XRF showed the resulting selenium dioxide of 99.077%, SEM-EDX showed At% selenium from SeO2 greater than pure selenium, XRD showed CIGS orientation on (211) and (105).

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrodeposition Technique to Fabrication CIGS using Pure Selenium and SeO2 as Selenium Source

Rahmawati

Abadi

Zulaikah

et al. 2022

Mal. J. Fund. Appl. Sci.

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“…Further, N A ≈ 10 16 cm −3 has also been found suitable for CuIn 1-x Ga x Se 2 (CIGS) and Cu 2 ZnSnS 4 (CZTS) based PV devices. [35][36][37][38][39][40][41][42]…”

Section: Impact Of Absorber Layer Thickness (D) and Doping Density (N...mentioning

confidence: 99%

Analysis of Si Back‐Contact for Chalcogenide Perovskite Solar Cells Based on BaZrS₃ Using SCAPS‐1D

Barman

Ingole

2023

Advcd Theory and Sims

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Barium zirconium sulfide (BaZrS3), a chalcogenide perovskite, is attracting a lot of attention for thin‐film photovoltaic (PV) application. Unlike the lead halide perovskites, it is stable and does not contain toxic elements. Herein, PV devices incorporating barium zirconium sulfide (BZS) are investigated numerically as a photoabsorber with a back‐contact layer of both crystalline and amorphous p+ type silicon, using a Solar Cell Capacitance Simulator software‐1D. The titanium (Ti) alloyed BZS, which has an electron‐energy bandgap close to optimum for a single junction PV device, is also investigated. A systematic study is carried out by varying the thickness, doping density, and defect density in the BZS layer. Among the two phases of Si, the amorphous one results in higher photoconversion efficiency (PCE) due to a favorable energy band alignment with BZS. The corresponding best PCEs predicted from the study are 19.7% for BZS films and 30% for Ba(Zr0.95Ti0.05)S3 films with the amorphous Si as back‐contact.

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“…The model is based on Cu(InGa)Se 2 /CdS junction and Mo back contact. The core of the CIGS solar cell is CIGS p-type absorber layer with the large variety of deposition possibilities, such as magnetron sputtering method [6], electrodeposition [7,8], co-evaporation [9], lowtemperature pulsed electron deposition (LTPED) [10,11] and sputtering with post-selenization [12][13]). The top layers (front contact) are made of transparent conductive oxide (TCO) with high-conductivity.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

Krawczak

Gulkowski

2017

E3S Web Conf.

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Abstract. The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

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Optical and electrical characterization of CIGS thin films grown by electrodeposition route

Cited by 16 publications

References 31 publications

Electrodeposition Technique to Fabrication CIGS using Pure Selenium and SeO2 as Selenium Source

Electrodeposition Technique to Fabrication CIGS using Pure Selenium and SeO2 as Selenium Source

Analysis of Si Back‐Contact for Chalcogenide Perovskite Solar Cells Based on BaZrS₃ Using SCAPS‐1D

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

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Optical and electrical characterization of CIGS thin films grown by electrodeposition route

Cited by 16 publications

References 31 publications

Electrodeposition Technique to Fabrication CIGS using Pure Selenium and SeO2 as Selenium Source

Electrodeposition Technique to Fabrication CIGS using Pure Selenium and SeO2 as Selenium Source

Analysis of Si Back‐Contact for Chalcogenide Perovskite Solar Cells Based on BaZrS3 Using SCAPS‐1D

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

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Analysis of Si Back‐Contact for Chalcogenide Perovskite Solar Cells Based on BaZrS₃ Using SCAPS‐1D