Optical and electrical properties of amorphous Si1 − x C x :H films

Najafov, B. A.; Isakov, G. I.

doi:10.1134/s0020168510060129

Cited by 5 publications

(7 citation statements)

References 5 publications

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“…Hydrogen concentration in films а-Si1-xGex: H, (x=0÷1) determined by the method of Brodsky, et al [14][15][16][17]:…”

Section: Resultsmentioning

confidence: 99%

“…Measured absorption coefficient (α), refraction (n), reflection (R), (T), width of band gap (E0) for each sample, using appropriate models [13,14]. Optical absorption at room temperature were studied by the method of Timber VV, Solovvan MN, Najafov BA, Isakov GI [13][14][15][16] on spectrometer x-29.…”

Section: The Experimental Partmentioning

confidence: 99%

“…Whereis m, m-1 -the wavelength corresponding to the neighbouring extreme and spectra of transparency or reflection (corresponding frequency, с-the speed of light. Refractive index is defined or the following formula[15].…”

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confidence: 99%

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Role of Hydrogen in Films а-Si1-X Gex: H (X=0÷1) used as Solar Cells

Fp¹

2018

PSBJ

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Infrared (IR) absorption spectra are investigated hydrogenated amorphous solid solution films a-Si1-xGex: H (x = 0 ÷ 1) plasma chemical vapor deposition at different partial pressures of hydrogen PH2. Defined force, oscillator, which essentially depend on PH2. It is shown that the hydrogen contained in films mostly in the forms of GeH, SiH. Using integrated acquisitions JW, determined the amount of hydrogen in the films. Film properties depend on the composition and level of hydrogenation. The number of hydrogen atoms in films, varied by changing the composition of the gas mixture. In the work measured IR absorption for films a-Si1-xGex: H, aGe: H and a-Si0,88Ge0, 12: h. based on films and a-Si: H and a-Si0,88 Ge0, 12: H fabricated three-layer solar cells with an area of item 1.3 cm 2 and efficiency equal to ~ 9.5%.

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“…Hydrogen concentration in films а-Si1-xGex: H, (x=0÷1) determined by the method of Brodsky, et al [14][15][16][17]:…”

Section: Resultsmentioning

confidence: 99%

Section: The Experimental Partmentioning

confidence: 99%

See 1 more Smart Citation

Role of Hydrogen in Films а-Si1-X Gex: H (X=0÷1) used as Solar Cells

Fp¹

2018

PSBJ

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“…where, N is Avogadro's number and (Г / ξ) is the integral force of the hydride with the unit of measurement cm 2 /mol, (Г / ξ) = 3.5. Let us to denote the spectral width as is denoted by Δω and the center of frequency as ω0, and then at Δω / ω0≤0.1, after approximation with an error of ± 2%, equation 14can be written in the following form [2][3][4][5][6][7][8][9][10]:…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Thin Films Alloy Si: H

Ra¹

2019

PSBJ

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In this work it is presented a methodology, based on optical properties, to determine the hydrogen concentration contained in films of a-Si: H and aGe: H. Moreover, it is shown that the film properties depend heavily on the composition and level of hydrogenation. The number of hydrogen atoms in the films were varied by changing trains and gas mixture measured infrared absorption for films of a-Si: H and aGe: H also defined width of forbidden zone E0 for these films. In the work of the IR absorption spectra are investigated alloy films and nk-Si: H (a-amorphous, nk-Nano crystalline) in the energy range 0.03-3.0 eV. Defined optical absorption coefficients (α) films for weakly and strongly absorbing spectra, as well as the coefficients of refraction (n) and weakening factors (active) for a variety of transparent and non-transparent substrates.

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“…Single crystal rubrene displays record-high electronic and opto-electronic properties for bulk organic semiconductors with charge carrier mobility reproducibly reaching up to 20 cm 2 V -1 s -1 22-24 alongside long exciton lifetimes and extraordinarily large exciton diffusion lengths. [25][26][27] The issue of environmental effects on rubrene is a prevalent one with oxygen incorporation and its effects poorly understood and still a source of debate within the literature. Mitrofanov et al associated a peak in the photo luminescence spectrum ~0.25 eV below the exciton peak with an oxygen-induced electronic state.…”

Section: Introductionmentioning

confidence: 99%

Channels of oxygen diffusion in single crystal rubrene revealed

Thompson

Bennett

Fearn

et al. 2016

Phys. Chem. Chem. Phys.

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Electronic devices made from organic materials have the potential to support a more ecologically friendly and affordable future. However, the ability to fabricate devices with well-defined and reproducible electrical and optical properties is hindered by the sensitivity to the presence of chemical impurities. Oxygen in particular is an impurity that can trap electrons and modify conductive properties of some organic materials. Until now the 3-dimensional profiling of oxygen species in organic semiconductors has been elusive and the effect of oxygen remains disputed. In this study we map out high-spatial resolution 3-dimensional distributions of oxygen inclusions near the surface of single crystal rubrene, using Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). Channels of diffused oxygen are found extending from uniform oxygen inclusion layers at the surface. These channels extend to depths in excess of 1.8 μm and act as an entry point for oxygen to diffuse along the ab-plane of the crystal with at least some of the diffused oxygen molecularly binding to rubrene. Our investigation of surfaces at different stages of evolution reveals the extent of oxygen inclusion, which affects rubrene's optical and transport properties, and is consequently of importance for the reliability and longevity of devices.

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Optical and electrical properties of amorphous Si1 − x C x :H films

Cited by 5 publications

References 5 publications

Role of Hydrogen in Films а-Si1-X Gex: H (X=0÷1) used as Solar Cells

Role of Hydrogen in Films а-Si1-X Gex: H (X=0÷1) used as Solar Cells

Optical Properties of Thin Films Alloy Si: H

Channels of oxygen diffusion in single crystal rubrene revealed

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