Optical and electrical properties of thin silver films grown under ion bombardment

Parmigiani, F.; Kay, E.; Huang, Ting; Perrin, J.; Jurich, M.; Swalen, and J. D.

doi:10.1103/physrevb.33.879

Cited by 78 publications

(24 citation statements)

References 41 publications

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“…In the case of tungsten, niobium, chromium, and copper Fig. 5 shows the inverse relation between resistivity and grain size, which is consistent with work by Parmigiani et al (15), who found that crystallite size effects dominate other microstructural features in determining resistivity in ion bombarded silver films. The data are plotted as normalized resistance Rfilm/Rbulk and fall on roughly two curves, one for Cu and W, and one for Nb and Cr, which approach their bulk resistivity values at relatively small grain size in comparison with copper and tungsten.…”

Section: Structure Modificationsupporting

confidence: 84%

Control of Metal Film Properties by Ion Assisted Deposition

1988

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Section: Structure Modificationsupporting

confidence: 84%

Control of Metal Film Properties by Ion Assisted Deposition

1988

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“…6,7 It is easy to verify that a plot of D vs Ē in our case would not give a single curve, suggesting that each ion energy produces a different regime as far as nucleation and growth mechanisms are concerned.…”

Section: Analyses and Resultsmentioning

confidence: 93%

“…Grain size reduction in IBAD films has been previously reported for different film-substrate combinations. [5][6][7][8][9] This effect has been related to the enhancement of the nucleation site density due to the ion bombardment. The presence of defects at the substrate surface is in fact an enhancing factor of the nucleation process.…”

Section: Analyses and Resultsmentioning

confidence: 99%

“…Previous works have shown the capability of this technique to modify chemical and physical properties of thin films. [2][3][4][5][6][7][8][9] This article reports the structural characterization of Al films grown onto Si wafers by Ar ϩ IBAD. We show that the Ar ϩ ion bombardment during the Al deposition acts on the kinetics of nucleation and growth and, as a consequence, on the microscopic structure of the films.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ion beam assisted deposition of Al films on Si

Terrasi

Ravesi

Marcellino

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Mechanical properties and residual stress in AlN/Al mixed films prepared by ion-beam-assisted depositionIon beam assisted deposition ͑IBAD͒ was used to grow thin Al films ͑ϳ100 nm thick͒ onto Si substrates at room temperature. Al was deposited by electron gun evaporation, while an Ar ϩ ion beam bombarded the film during the growth. Ion beam energies of 300, 500, and 650 eV were used, with current densities ranging between 4 and 20 A/cm 2 . Polycrystalline Al films have been obtained, whose structural properties were strictly related to the IBAD parameters ͑ion current and energy͒. Samples were analyzed by transmission electron microscopy and Rutherford backscattering spectrometry, pointing out the following effects: ͑1͒ IBAD produces smaller polycrystalline Al grains with respect to a film evaporated in standard high vacuum conditions; ͑2͒ the Al grain size decreases by increasing the ion current or decreasing the ion energy; ͑3͒ sputtering yields during IBAD are higher with respect to a postdeposition bombardment process, and show an inverse trend with the ion beam energy. Results have been explained in terms of modification of kinetics of growth induced by IBAD. A simple model is also proposed to take into account the unexpected result about the sputtering yield. Finally, the IBAD capability to modify the microstructure of the Al films was used to improve the coverage of artificially stepped substrates.

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“…Coming back to our experimental results, we can attempt to explain the remaining discrepancies by considering a silver layer that is even lossier than measured by Palik. Indeed, porosity and surface roughness have been reported to substantially increase parasitic losses in silver [42,43]. Based on a study of rough interfaces between silver and ZnO by real-time spectroscopic ellipsometry, Sainju et al were able to extract the permittivity of an interfacial layer that represents intermixing of silver and ZnO [43].…”

Section: Modification Of Materials Propertiesmentioning

confidence: 99%

Plasmonic silicon solar cells: impact of material quality and geometry

Pahud¹,

Isabella²,

Naqavi³

et al. 2013

Opt. Express

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Abstract:We study n-i-p amorphous silicon solar cells with lightscattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We use stencil lithography to produce the same periodic arrangement of the particles and we use the same solar cell structure on top, thus establishing a fair comparison between a novel plasmonic concept and its more traditional counterpart. Both approaches show strong resonances around 700 nm in the external quantum efficiency the position and intensity of which vary strongly with the nanoparticle shape. Moreover, disagreement between simulations and our experimental results suggests that the dielectric data of bulk silver do not correctly represent the reality. A better fit is obtained by introducing a porous interfacial layer between the silver and zinc oxide. Without the interfacial layer, e.g. by improved processing of the nanoparticles, our simulations show that the nanoparticles concept could outperform traditional back reflectors.

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Optical and electrical properties of thin silver films grown under ion bombardment

Cited by 78 publications

References 41 publications

Control of Metal Film Properties by Ion Assisted Deposition

Control of Metal Film Properties by Ion Assisted Deposition

Ion beam assisted deposition of Al films on Si

Plasmonic silicon solar cells: impact of material quality and geometry

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