In this paper the influence of point defects generated by the ion implantation process in 4H-SiC DIMOSFET has been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. In particular it has been observed that a reduction of the source ion implanted dose produces a large reduction of point defects in the source region and a considerable improvement of the electrical characteristic of the DIMOSFET.

Nickel silicide is widely used to realize contact terminals of integrated circuits and is usually formed by ex‐situ heating treatments. In‐situ reactions during sputter deposition of a Ni layer onto a HF p‐type [001] Si substrate have been investigated in this work, by means of transmission electron microscopy, X‐ray diffraction and X‐ray reflectivity analyses. A thin layer of polycrystalline silicide, with extremely flat interfaces and in fiber texture with the Si substrate, has been obtained by introducing a sputter etching step just before Ni deposition and properly modulating its duration. The work has also been aimed to decouple the thermal impact of sputter etching from its effect on surface cleaning, disclosing its key role in the whole reaction process. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Mechanical properties and residual stress in AlN/Al mixed films prepared by ion-beam-assisted depositionIon beam assisted deposition ͑IBAD͒ was used to grow thin Al films ͑ϳ100 nm thick͒ onto Si substrates at room temperature. Al was deposited by electron gun evaporation, while an Ar ϩ ion beam bombarded the film during the growth. Ion beam energies of 300, 500, and 650 eV were used, with current densities ranging between 4 and 20 A/cm 2 . Polycrystalline Al films have been obtained, whose structural properties were strictly related to the IBAD parameters ͑ion current and energy͒. Samples were analyzed by transmission electron microscopy and Rutherford backscattering spectrometry, pointing out the following effects: ͑1͒ IBAD produces smaller polycrystalline Al grains with respect to a film evaporated in standard high vacuum conditions; ͑2͒ the Al grain size decreases by increasing the ion current or decreasing the ion energy; ͑3͒ sputtering yields during IBAD are higher with respect to a postdeposition bombardment process, and show an inverse trend with the ion beam energy. Results have been explained in terms of modification of kinetics of growth induced by IBAD. A simple model is also proposed to take into account the unexpected result about the sputtering yield. Finally, the IBAD capability to modify the microstructure of the Al films was used to improve the coverage of artificially stepped substrates.

Doping incorporation and good uniformity along the wafer it is a mandatory for application in high voltage electronic devices. In this work the effect of the Hydrogen (H) flux position inside the reaction chamber on homo-epitaxial 4H-SiC growth process has been studied. Capacitance-Voltage and FT-IR analyses show as the different position of the gas injector affect the doping and thickness uniformity and profile. On the other hand, By Candela and AFM analyses no morphological or surface influence by Hydrogen flux position has been observed.