Optical band gap of Cd1−x MnxTe and Zn1−x MnxTe semiconductors

Zhukovskii, P. V.; Partyka, Ya.; Vengerek, P.; Sidorenko, Yu. V.; Shostak, Yu. A.; Rodzik, A.

doi:10.1134/1.1393024

Cited by 3 publications

(3 citation statements)

References 3 publications

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“…Vacancies in the crystal lattice create a deformation potential that corresponds to the lattice stretching [12]. The majority of experimental results obtained by various authors testify that the increase of the crystal lattice parameters leads to a reduction of [13]. This phenomenon manifests itself well in experiments on the hydrostatic compression of crystals [12]; namely, the bulk hydrostatic pressure results in a reduction of both the interatomic distance and the energy gap width.…”

Section: Results Of Experimental and Theoretical Researches And Theirmentioning

confidence: 77%

Influence of Cu-, Sn-, and In-Doping on Optical Properties of AgGaGe3 Se8 Single Crystals

2016

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The optical properties of AgGaGe3Se8 single crystals doped with Cu, In, and Sn atoms have been studied. A physical model is proposed for those compounds, which are wide-gap semiconductors (≈ 2.09-2.15 eV at = 300 K) with the-type conductivity, and whose optical parameters depend on the dopant nature and concentration. On the basis of this model and making allowance for specific features of disordered systems, the obtained experimental results are explained. K e y w o r d s: chalcogenide crystals, optical properties, Urbach energy.

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Section: Results Of Experimental and Theoretical Researches And Theirmentioning

confidence: 77%

Influence of Cu-, Sn-, and In-Doping on Optical Properties of AgGaGe3 Se8 Single Crystals

2016

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“…Indeed, if the charge transfer occurs between the defects, whose ground states are neutral, hopping results in dipoles. The latter should result in an additional polarization, whose dispersion can be described using the following relation for dielectric susceptibility [28]:…”

Section: Resultsmentioning

confidence: 99%

Structures with alternate semiconductor and nematic nanolayers: formation, properties, application

Іващишин¹,

Grigorchak²,

Mikityuk³

et al. 2010

Russ Phys J

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The purpose of this work was to form a periodic multilayer structure with alternate heterophase and heteroaggregate nanolayers using intercalation techniques. The investigation was concerned with layered semiconductor gallium selenide. The stages of formation of a liquid GaSe crystal are described. The results of examination of the obtained samples by the methods of X-ray diffraction and impedance spectroscopy are discussed. The structures of impedance models are given.

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“…In such a case non-monotonous behaviour of dielectric permittivity is caused by the jump-like charge transfer between the defects with a neutral ground state. This charge transfer produces effective dipoles leading to additional polarization with dispersion given by the expression [31]: χ ∝ ν −(α+2) , where ν is the frequency. At α < −2 this dispersion becomes abnormal.…”

Section: Manifestations Of the Electret Effect In Gase And Inse Crystalsmentioning

confidence: 99%

Electret effect in intercalated crystals of the A^{III}B^{VI} group

Grygorchak¹,

Voitovych²,

Stasyuk³

et al. 2007

Condens. Matter Phys.

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Measurements of dielectric properties of Ni-intercalated GaSe and InSe have been performed. The present study is aimed at the investigation of the low-admixture region where the intercalation induced electret effect occurs. The effect exhibits pronounced peak-like concentration dependences and a non-monotonous temperature behaviour with maximum magnitudes at low temperatures. Intercalation leads to over tenfold increase of dielectric permittivity over the whole measured frequency range with up to several orders at low frequencies for GaSe. Temperature dependences of the permittivity demonstrate well-defined peaks with localizations and heights strongly depending on the concentration. A microscopic model of order-disorder type has been proposed that considers redistribution of intercalant atoms between non-polar octahedral and polar tetrahedral positions in the crystal van der Waals gaps. Such a redistribution can occur in the form of phase transition to the polar phase (corresponding to the electret effect) which is stabilized by the internal field. For the case of octahedral positions being more preferable, the model predicts a peak-like dependence of the crystal polarization on chemical potential due to passing through the interjacent polar phase in accordance with the measured behaviour of the electret effect. The calculated temperature dependences of dielectric susceptibility qualitatively reproduce experimental results for permittivity as well.

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Optical band gap of Cd1−x MnxTe and Zn1−x MnxTe semiconductors

Cited by 3 publications

References 3 publications

Influence of Cu-, Sn-, and In-Doping on Optical Properties of AgGaGe3 Se8 Single Crystals

Influence of Cu-, Sn-, and In-Doping on Optical Properties of AgGaGe3 Se8 Single Crystals

Structures with alternate semiconductor and nematic nanolayers: formation, properties, application

Electret effect in intercalated crystals of the A^{III}B^{VI} group

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