Optical beam testing and its potential for electronic device characterization

Soelkner, Gerald

doi:10.1016/0167-9317(94)90086-8

Cited by 8 publications

(3 citation statements)

References 24 publications

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“…De/tar = roaTCR (T -To) (1) Where ro and aTCR are respectively the resistivity and the temperature coefficient of metal resistance, T the temperature upon laser heating, and TOthe initial temperature of the metal. Fig 3. shows an example ofdirect Localization ofshort circuit in a BiCMOS device that presents a current leakage on some I/O (I > 100 rnA instead of!…”

Section: Invited Papermentioning

confidence: 99%

“…A 1064nm wavelength laser source generates electron-hole pairs in the device active area 9781-4244-3912-6/09/$25.00 ©2009 IEEE that induces a detectable photocurrent injunctions. It allows the localization of junction defects with Optical Beam Induced Current (OBlC) [1], No Bias OBIC (NBOBIC) [2], Single Contact OBIC (SCOBIC) [3]. In addition, Gate opens can be localized by Laser Induced Voltage Alteration (UVA) [4] and Logic State Mapping can be imaged [5].…”

Section: Introductionmentioning

confidence: 98%

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Fault localization by Dynamic Laser Stimulation extended testing

Perdu

2009

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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Section: Invited Papermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Fault localization by Dynamic Laser Stimulation extended testing

Perdu

2009

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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“…In the same way as light emission, the techniques based on laser stimulation have been mainly developed in failure analysis [8] [9]. On the one hand, the laser stimulation at a 1064 nm wavelength allows to induce a local photocurrent [10], either to detect a latch-up mechanism and inter-level shorts or to locate open circuits and direct semiconductor damage (LIVA, OBIC).…”

Section: Introductionmentioning

confidence: 99%

When Failure Analysis Meets Side-Channel Attacks

Di-Battista

Courrège

Rouzeyre

et al. 2010

Lecture Notes in Computer Science

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Abstract. The purpose of failure analysis is to locate the source of a defect in order to characterize it, using different techniques (laser stimulation, light emission, electromagnetic emission...). Moreover, the aim of vulnerability analysis, and particularly side-channel analysis, is to observe and collect various leakages information of an integrated circuit (power consumption, electromagnetic emission ...) in order to extract sensitive data. Although these two activities appear to be distincted, they have in common the observation and extraction of information about a circuit behavior. The purpose of this paper is to explain how and why these activities should be combined. Firstly it is shown that the leakage due to the light emitted during normal operation of a CMOS circuit can be used to set up an attack based on the DPA/DEMA technique. Then a second method based on laser stimulation is presented, improving the "traditional" attacks by injecting a photocurrent, which results in a punctual increase of the power consumption of a circuit. These techniques are demonstrated on an FPGA device.

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