Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy

Banvillet, H.; Gil, Evelyne; Cadoret, R.; Disseix, P.; Ferdjani, K.; Vasson, A.; Tabata, A.; Benyattou, T.; Guillot, G.

doi:10.1063/1.349529

Cited by 28 publications

(4 citation statements)

References 21 publications

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“…Assuming the PL peak position of the QWRs is determined mainly by the mean thickness of the bridge structures, we can estimate the thickness to be about 4 MLs according to the results reported in Ref. [13], which agrees with that observed by AFM. In addition, there is a shoulder at the high energy side of peak '3', which may be attributed to the wetting layer (WL) because no other peaks have been observed on the higher energy side.…”

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confidence: 87%

Optical Properties of InAs Quantum Dots Grown on InP (001) Substrate by MOCVD

Wang

Chua

2001

phys. stat. sol. (b)

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We report on the optical properties of InAs self-organized quantum dots formed in an InP matrix by low-pressure metal organic chemical vapour deposition (MOCVD) using TBAs and TBP as group-V sources. Strong photoluminescence located at wavelength $1.3 mm is observed at room temperature. The photoluminescence taken at low temperatures shows multiple peaks. Some of the peaks are attributed to emission from different low-dimensional structures.Among a variety of fabrication techniques developed for the realization of high quality quantum dots, the fabrication of coherently strained self-organized quantum dots (SQDs) deposited by heteroepitaxial growth in the Stranski-Krastanov mode has attracted much attention since these defect-free, zero-dimensional, semiconductor structures are expected to lead to major developments for future high-speed electronic and optoelectronic devices as well as for their intriguing physical properties [1]. The SQDs formation process is driven by the reduction of the total strain and surface energy of the layer-substrate system and is limited by kinetic factors such as adatom migration and surface diffusion [2, 3]. So far, most studies have focused on InAs SQDs in GaAs and InP SQDs in GaInP. In contrast, relatively few reports are available regarding the growth of InAs SQDs in InP. In view of the strong luminescence of the SQDs at about 1.3-1.55 mm, which makes the InAs SQDs in InP well suited for optoelectronic communication devices, e.g., lasers with a low threshold current, high modulation speed, and temperature insensitivity, a detailed understanding of their optical properties is of great interest. It has been demonstrated that the mean size of the InAs dots on InP surface is about 30-70 nm [4,5], which is larger than that formed on GaAs surface, and the emission wavelength of the SQDs is around the region of 1.5 mm [4][5][6][7][8]. In addition, differing from a GaAs surface, it has been shown that As/P exchange reaction plays an important role in the formation of InAs SQDs on the InP surface [9][10][11]. Especially, InAs dots can be formed on InP surface by only using the As/P exchange reaction [9,12].In this paper, we report on the results of the optical properties of InAs SQDs which are grown in InP by MOCVD using TBA and TBP as group V sources. The emission at about 1.3 mm has been observed at room temperature.The growth is performed in a low-pressure MOCVD system with a horizontal reactor, using trimethylindium (TMIn), trimethylgallium (TMGa), pure TBA and TBP as source materials. The structures are grown on a (001) InP substrate. After the substrate treatment at 650 C for 5 min under TBP, an InP buffer layer with a thickness of 200 nm is grown at 600 C. The substrate temperature is then lowered to 450 C under 1 ) Fax: (65) 8720785;

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confidence: 87%

Optical Properties of InAs Quantum Dots Grown on InP (001) Substrate by MOCVD

Wang

Chua

2001

phys. stat. sol. (b)

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“…In the case of InAs/GaAs QDs, monomodal or bimodal emission bands are generally observed unless a special growth technique is used [14]. In the case of InAs/InP QDs or QSs, multimodal emission spectra with up to eight distinguishable components are often observed [8,11,[15][16][17][18][19][20][21][22][23]. This multimodal emission is attributed to the presence of well-defined families of QDs or QSs corresponding to ultrathin islands with integer ML variation of InAs thickness between three and ten MLs.…”

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confidence: 99%

“…However, in contrast to what could be expected from InAs islands with well-defined interfaces, the energy positions of the maxima of the multimodal emission vary from report to report. Even though these positions from a given sample can be well reproduced by square-well models based on the envelope function approximation (EFA) [8,[15][16][17][18]22], the valence band offset (VBO) required to obtain a good agreement between the experiments and the calculations varies between 250 meV and 480 meV. Furthermore, all reported calculations assume that the QDs are composed of the InAs binary rather than an InAsP alloy.…”

Section: Introductionmentioning

confidence: 99%

Optical emission from InAs/InP self-assembled quantum dots: evidence for As/P intermixing

Lanacer

Shtinkov

Desjardins

et al. 2007

Semicond. Sci. Technol.

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We have studied the optical properties of ultrathin InAs/InP quantum wells and Stranski-Krastanov nanostructures using photoluminescence and photoluminescence excitation experiments. For InAs epilayers thinner than 2.4 monolayers, the emission spectrum consists of a single peak and the ground-state exciton energy is in good agreement with predictions based on the tight-binding method for ultrathin quantum wells. Beyond this thickness, the photoluminescence spectra evolve to a multimodal emission indicative of the presence of families of quantum dots with small heights. The emission of these quantum dots is blue-shifted significantly (∼100 meV) from the predicted values. The discrepancy is explained by As/P intermixing that occurs during quantum dot formation.

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“…19 It is well known that InAs/InP (001) layers can grow in a Stranski-Krastanov mode involving a transition from 2D to 3D growth after a few (≥~2) monolayers (ML). [20][21][22][23][24] This is the case for most highly strained heteroepitaxial layers in compression on (001) substrates. Although the mechanisms of the 2D-3D transition are not fully understood, it is well known that the detailed morphology of InAs layers on InP is highly sensitive to the growth interruption sequence.…”

Section: Introductionmentioning

confidence: 99%

Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized Islands on InP(001)

Marchand

Desjardins

Guillon

et al. 1997

Journal of Elec Materi

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Self-assembled InAs islands were grown by metalorganic vapor phase epitaxy on InP(001) and characterized by atomic force microscopy and transmission electron microscopy. The growth temperature (450-600°C), the InAs deposition time (3-12 s, using a growth rate of ~2.3Å/s), and the growth interruption time (8-240 s) were varied systematically in order to investigate the effect of thermodynamic and kinetic factors on the structural properties of InAs/InP and InP/InAs/InP structures. It is found that the structural properties of islands vary widely with the growth conditions, ranging from very small (4-5 nm height, ~30-60 nm in diameter) coherent islands at low temperature (450-500°C) to large (~350 nm wide) plastically relaxed islands at high temperature (600°C). For a given deposition time, the height of the coherent islands increases markedly with the growth temperature while their diameter shows only a moderate increase. The growth interruption time also affects the formation and the evolution of islands, which clearly shows that these processes are kinetically limited. Coherent islands with structural properties suitable for use in optoelectronic devices are obtained from ~2.4-4.8 monolayer thick InAs layers using a growth temperature of 500°C and a 30 s interruption time.

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Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor-phase epitaxy

Cited by 28 publications

References 21 publications

Optical Properties of InAs Quantum Dots Grown on InP (001) Substrate by MOCVD

Optical Properties of InAs Quantum Dots Grown on InP (001) Substrate by MOCVD

Optical emission from InAs/InP self-assembled quantum dots: evidence for As/P intermixing

Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized Islands on InP(001)

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