Optical lithography technologies for 45-nm node CMOS

Motomizu, Shoji; Uesawa, Fumikatsu; Kyoh, Suigen; Fujise, Hiroharu; Shiobara, Eishi; Katsumata, Mikio; Hane, Hiroki; Sugiyama, Takafumi; Sho, Koutaro; Miyazaki, Maki; Takahata, Kazuo; Kanai, Hideki; Satõ, Kazuya; Hashimoto, Kohji

doi:10.1117/12.600948

Cited by 3 publications

(2 citation statements)

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“…Calculations for the dry lithography was not performed, because the process margin is expected to become too small if NA < 1. 9 The immersion fluid was set to be water, as NA can become 1.20 without the usage of high refractive index medium having n > 1.5. Fig.…”

Section: Mask CD Tolelance In Immersion Lithographymentioning

confidence: 99%

Mask specifications for 45-nm node: the impact of immersion lithography and polarized light imaging

2006

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This paper presents the impact of hyper-NA (NA > 1) lithography on the specification of mask critical-dimension (CD) uniformity. In order to realize the hyper-NA lithography, it is needed to adopt new technologies such as a liquid-immersion setup and polarized light illuminator. In the immersion lithography, it has been shown that the mask CD tolerance can be relaxed if NA is increased. This relaxation originates from the increase of the exposure-latitude (EL) in defocus conditions. As has also been reported, polarized light imaging enhances the EL of line-and-space patterns. This indicates that the application of polarized light imaging may enable us to relax the mask CD tolerance. In this paper, the mask CD relaxation will be discussed based on lithography simulations. In addition, the influences of mask birefringence and state of polarization in illuminator on the wafer CD will be discussed. Quartz substrate used as a mask blank can act as a rotation retarder, because of the presence of intrinsic stress induced in manufacturing processes. Therefore, the state of polarization of mask-transmitted light is disturbed. As a result, wafer CD is affected both by the mask birefringence and state of polarization in illuminator; hence, specification of mask CD uniformity (CDU) is also influenced. In this paper, the specification of mask CDU will be discussed by taking the effect of the impact of state of polarization in illuminator and mask birefringence into account. These results accelerate the practical use of hyper-NA lithography in 45-nm node.

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Section: Mask CD Tolelance In Immersion Lithographymentioning

confidence: 99%

Mask specifications for 45-nm node: the impact of immersion lithography and polarized light imaging

2006

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“…For a 45 nm half pitch devise. the wet exposure tool will be used in lithography process 1,2,3 . In addition, a hyper NA projection lens such as around 1.3 NA is necessary for the immersion lithography.…”

Section: Introductionmentioning

confidence: 99%

Impact of polarization for an attenuated phase-shift mask with ArF hyper-NA lithography

Satō

Endo

Mimotogi

et al. 2005

Optical Microlithography XVIII

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In recent low-k1 lithography, the size of a mask pattern is becoming close to wavelength of the light source. The light intensity through the mask pattern is depending on polarization. TM polarization light is higher transmission than TE polarization light for a MoSi mask. This effect influences not only the zeroth-order light but the first-order light. On the other hand, TE polarization imaging makes higher contrast than TM polarization in two beam interference. Effects of polarization to resolution are not simple. Since an attenuated phase shift mask is used in order to obtain high contrast, it is necessary to take into consideration the influence of that. It is also taken into consideration that illumination light is not perpendicular incidence but oblique incidence for an ArF hyper-NA tool. We will perform a rigorous simulation in consideration of the above conditions. Hereby influence of the to the utmost resolution will be clarified by the rigorous simulation.

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Impact of polarization on an attenuated phase shift mask with ArF hyper-numerical aperture lithography

Satō

Endo

Mimotogi

et al. 2006

J. Micro/Nanolith. MEMS MOEMS

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Optical lithography technologies for 45-nm node CMOS

Cited by 3 publications

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Mask specifications for 45-nm node: the impact of immersion lithography and polarized light imaging

Mask specifications for 45-nm node: the impact of immersion lithography and polarized light imaging

Impact of polarization for an attenuated phase-shift mask with ArF hyper-NA lithography

Impact of polarization on an attenuated phase shift mask with ArF hyper-numerical aperture lithography

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