Optical Measurement Techniques of Recombination Lifetime Based on the Free Carriers Absorption Effect

Abstract

We review successful measurement techniques for the evaluation of the recombination properties in semiconductor materials based on the optically induced free carrier absorption. All the methodologies presented share the common feature of exploiting a laser beam to excite electron-hole pairs within the volume of the sample under investigation, while the probing methods can vary according to the different methodology analyzed. As recombination properties are of paramount importance in determining the properties of semiconductor devices (i.e, bipolar transistor gain, power devices switching features, and solar cells efficiency), their knowledge allows for better understanding of experimental results and robust TCAD simulator calibration. Being contactless and applicable without any particular preparation of the sample under investigation, they have been considered attractive to monitor these parameters inline or just after production of many different semiconductor devices.

Broadband, High‐Speed, and Large‐Amplitude Dynamic Optical Switching with Yttrium‐Doped Cadmium Oxide

“…The switching speeds in transient pump dependent all‐optical modulation are determined by the relaxation time of photoexcited carriers . After the materials reach their peak modulation value, the photoexcited carriers recombine through processes including direct radiative recombination, trap‐assisted recombination, and Auger recombination, and the sample subsequently returns to its original transmittance or reflectance. In this section, we identify the dominant relaxation mechanisms in doped and undoped CdO.…”

Free charge carrier absorption in silicon at 800 nm

“…e.g. [1,4,6,[8][9][10][11][12][13][14][15][16][17][18][19][20][21]). Afterwards possible contributions from e.g.…”

“…e.g. [1,8,15,[18][19][20][21][22][23][24][25][26]). It typically depends on the sample thickness and irradiation details like the wavelength, c.w.…”

Modeling and Simulation of Photovoltaic Cell using Single Diode Solar Cell and Double Diode Solar Cell Model

“…Three types of recombination mechanisms are reported by the researchers viz a viz. Band to Band, Trap assisted and Auger recombination[15]. These mechanisms are explained byFig 2 and Fig 3.…”