Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targets

Mendoza-Galván, A.; Arreola-Jardón, G.; Karlsson, Linda; Persson, Per; Jiménez‐Sandoval, S.

doi:10.1016/j.tsf.2014.01.042

Cited by 7 publications

(2 citation statements)

References 23 publications

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“…It is worth mentioning that the bandgap reported for covellite in several works [7][8][9]19,36] is in the vicinity of the values corresponding to such electronic transition in CdS (%2.45 eV), [37] making difficult to differentiate them. The metallic character of the CuS films corresponding to a highly degenerated semiconductor, [38] is a reported behavior of the covellite CuS structure attributed to the large concentration of holes. [33][34][35] Following the optical analysis of the T spectra, the SE measurements were analyzed to determine the behavior of the optical constants of the system.…”

Section: Optical Propertiesmentioning

confidence: 99%

Deposition of Highly Crystalline Covellite Copper Sulphide Thin Films by SILAR

Ramírez-Esquivel

Mazón-Montijo

Aguirre-Tostado

2017

Physica Status Solidi (a)

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Thin films of the covellite phase of CuS are of special importance due to their properties for optoelectronic device applications. Their preparation by chemical solution methods could enable their deposition on flexible substrates at low temperature for large area applications. Successive Ionic Layer Adsorption and Reaction (SILAR) is a promising option because it is simple, inexpensive, and allows the control of thickness and composition. However, low crystalline CuS thin films have been reported so far. In this work, highly polycrystalline CuS thin films were successfully grown at room temperature by SILAR using CuSO4 and Na2S as the ionic solutions without post‐deposition annealing. The films obtained at different SILAR cycles resulted in good appearance, uniformity, well adhered to the substrate, and presented the covellite structure as the predominant crystalline phase. X‐ray diffraction analysis showed important details about the films growth evolution, which were in agreement with results from atomic force microscopy and ellipsometry. All the films exhibited low electrical resistivity in agreement with the metallic behavior observed in the infrared region of their transmittance spectra. These results demonstrate a direct method of obtaining highly polycrystalline CuS thin films at low temperature, which could open a new range of applications.

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Section: Optical Propertiesmentioning

confidence: 99%

Deposition of Highly Crystalline Covellite Copper Sulphide Thin Films by SILAR

Ramírez-Esquivel

Mazón-Montijo

Aguirre-Tostado

2017

Physica Status Solidi (a)

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“…Dual-doping is an interesting approach to control the physical properties of II-VI compounds. The use of composite targets has proven to be a simple and robust method for growing doped semiconductor films [14][15][16]. In this work the structural, optical and electrical properties of CdSe sputtered films are reported for the first time, using different concentrations of CuO (as source of Cu and O atoms) in the sputtering target and for different substrate temperatures.…”

Section: Introductionmentioning

confidence: 99%

Dual-doped CdSe:Cu:O films grown by sputtering using CdSe–CuO composite targets

Lopez

Rodriguez-Melgarejo

Hernández-Landaverde

et al. 2020

J. Phys.: Condens. Matter

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The effects of the simultaneous incorporation of Cu and O in CdSe films grown by sputtering are presented. The Cu and O contents varied between 1 and 5 at.% in films deposited at 150, 200, 250 and 300 °C. Concentrations of 2, 3, 4 and 5 at.% of CuO in the target promoted the formation of copper selenide clusters immersed within the CdSe:Cu:O host. Energy considerations (enthalpy of formation and bond dissociation energy) were used to discuss the absence of copper oxide and the formation of copper selenide aggregates, as well as the film thickness dependence on the concentration of CuO in the target. The band gap of the films ranged from 1.21 to 2.07 eV, depending upon growth conditions. Significant below-band-gap absorption was observed which was ascribed to the copper selenide micro and nano clusters. Good crystalline quality of the films, for high substrate temperatures, was evidenced through the appearance of overtones of the vibrational longitudinal optic modes detected by Raman micro spectroscopy. It was determined that the electronic properties, optical transmission and electrical conductivity depended on the chemical composition and crystalline structure. This characteristic is relevant because through copper and oxygen co-doping is possible to control these technologically important physical properties of CdSe in a simple and reliable manner.

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