Optical Properties of Oxygen Agglomerates in Silicon

Binetti, S.; Pizzini, S.; Leoni, E.; Somaschini, R.; Castaldini, A.; Cavallini, A.

doi:10.4028/www.scientific.net/ssp.82-84.75

Cited by 8 publications

(10 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We have already shown that oxygen interacts with dislocations in plastically deformed Czochralski silicon, leading to the setting up of characteristic broad PL emissions in the same range of energy (0.8-1.0 eV) typical of the D1-D4 bands of dislocations [6,7]. The oxygenrelated component of the D1 band at 0.830 eV is particularly significant and could be easily extracted from the main band by suitable deconvolution procedures.…”

Section: Introductionmentioning

confidence: 95%

Dislocation luminescence in nitrogen-doped Czochralski and float zone silicon

Binetti

Somaschini

Donne

et al. 2002

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

This paper reports the results of a study of the effect of nitrogen on the optical properties of dislocations in nitrogen-doped Czochralski and nitrogen-doped float zone silicon samples where the nitrogen doping was carried out by adding Si 3 N 4 in the molten silicon charge or by nitrogen gas dissolution. Dislocations were introduced by plastic deformation at 650 • C.In nitrogen-doped plastically deformed samples, emissions in the range of the D1-D4 bands of dislocations are present with a significant shifting from the energies and intensities of the corresponding bands in nitrogen-free samples. It has been shown that the main effect of nitrogen could be the enhancement of the oxygen precipitation. The results confirm the suggestion of some of the present authors that luminescence at 0.830 eV is associated with some intrinsic properties of oxygen precipitates.

show abstract

Section: Introductionmentioning

confidence: 95%

Dislocation luminescence in nitrogen-doped Czochralski and float zone silicon

Binetti

Somaschini

Donne

et al. 2002

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…9. Incidentally, a broad band in the same energy range was found as the unique PL fingerprint of the segregation of oxide nanoparticles in Cz samples annealed at 650'C for 64h [9]. It should be also remarked that the PL intensity of the P line is quite comparable with that observed in carbon-lean samples, in spite of the lesser density of donors formed and a larger integral radiative emission of the sample.…”

Section: Czm Samplesmentioning

confidence: 53%

Radiative recombination processes of thermal donors in silicon

et al. 2001

Self Cite

View full text Add to dashboard Cite

There is a recent, renewed attention on the possible development of optical emitters compatible with silicon microelectronic technology and it has been recently shown that light emitting diodes could be manufactured on dislocated silicon, where dislocations were generated by plastic deformation or ion implantation. Among other potential sources of room temperature light emission, compatible with standard silicon-based ULSI technology, we have studied old thermal donors (OTD), as the origin of their luminescence is still matter of controversy and demands further investigation.In this work we discuss the results of a spectroscopical study of OTD using photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS) on standard Czochralsky (Cz) silicon samples and on carbon-doped samples. We were able to show that their main optical activity, which consists of a narrow band at 0.767 eV ( P line), is correlated to a transition from a shallow donor level of OTD to a deep level at Ev+0.37 eV which is tentatively associated to C-O complexes. As we have shown that the P line emission persists at room temperature, we discuss about its potentialities to silicon in optoelectronic applications.

show abstract

“…However, the corresponding peak position reported in table 2 is clearly higher than 807 meV for the D1 dislocation line and close to the expected value of 874 meV for D2. According to the interpretation put forward by Pizzini et al [8,9] and following upon an original suggestion by Tajima et al [13], this points to the presence of oxygen precipitates in the B12 starting material. Furthermore, the high energy of the D1 line suggests an early stage of precipitation, leading to small SiO x particles.…”

Section: Resultsmentioning

confidence: 82%

“…Finally, a shoulder is clearly evident on the low-energy flank of the D1 line of the annealed 200 m cm material. It could correspond to the D1a line at 802 eV of [9]. 796 meV shoulder shows different behaviour with excitation power and with temperature.…”

Section: Resultsmentioning

confidence: 98%

“…In this way, the material becomes transparent in the mid-infrared region due to a deactivation of the B dopant atoms, through the creation of radiation damage. Alternatively, it has recently been demonstrated that the study of the well-known D1-D2 photoluminescence (PL) lines [7] in heat-treated Cz silicon could provide further insight into oxygen precipitation [8,9]. It has in fact been shown that the line position (energy) depends sensitively on the details of the oxygen precipitation treatment [8,9].…”

Section: Labelmentioning

confidence: 99%

See 1 more Smart Citation

Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon

Simoen¹,

Loo²,

Claeys³

et al. 2002

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Results are presented on the photoluminescence (PL) characterization of heavily doped p + Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p + material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscopy results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon.

show abstract

Optical Properties of Oxygen Agglomerates in Silicon

Cited by 8 publications

References 0 publications

Dislocation luminescence in nitrogen-doped Czochralski and float zone silicon

Dislocation luminescence in nitrogen-doped Czochralski and float zone silicon

Radiative recombination processes of thermal donors in silicon

Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon

Contact Info

Product

Resources

About