Photoluminescence (PL) and deep level transient spectroscopy (DLTS) measurements were used to study the origin of optical emissions in the 0.8–1.0 eV region of selected oxygen precipitated and dislocated silicon samples. It was shown that the D1 band, present in both types of samples, is the convolution of different sub-bands, narrowly spaced between 0.802 and 0.820 eV. The emission at 0.807 eV, assigned in the literature to dislocations, was found only in samples where dislocations were intentionally generated by plastic deformation or induced by the clustering of self-interstitials generated during the growth of oxide precipitates. A comparison of the results of PL, DLTS, and optical DLTS measurements allows the assignment of levels involved in the radiative recombination processes.

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A 65nm NOR Flash technology, featuring a true 10λ², 0.042µm² cell, is presented for the first time for 1bit/cell and 2bit/cell products. Advanced 193nm lithography, floating gate self aligned STI, cobalt salicide and three levels of copper metallization allow the integration with a high density and high performance 1.8V CMOS. IntroductionThe continuous expansion and the evolution of wireless applications ask for increasing the density and the performances of Flash memories. In this paper we present a 65nm NOR Flash technology with a cell as small as 0.042µm² (0.021µm² per bit in multilevel memories), that is the smallest presented so far (1). Use of 193nm lithography with high NA, floating gate self aligned to STI isolation, cobalt salicide and three levels of copper interconnections allow us to keep following the 10λ² roadmap for NOR cell down to this generation, integrating for the first time at this technology node high performance logic for low voltage 1.8V operation suitable for System On Chip applications.

This paper reports the results of a study of the effect of nitrogen on the optical properties of dislocations in nitrogen-doped Czochralski and nitrogen-doped float zone silicon samples where the nitrogen doping was carried out by adding Si 3 N 4 in the molten silicon charge or by nitrogen gas dissolution. Dislocations were introduced by plastic deformation at 650 • C.In nitrogen-doped plastically deformed samples, emissions in the range of the D1-D4 bands of dislocations are present with a significant shifting from the energies and intensities of the corresponding bands in nitrogen-free samples. It has been shown that the main effect of nitrogen could be the enhancement of the oxygen precipitation. The results confirm the suggestion of some of the present authors that luminescence at 0.830 eV is associated with some intrinsic properties of oxygen precipitates.