Optical properties of oxygen precipitates and dislocations in silicon

Abstract

Photoluminescence (PL) and deep level transient spectroscopy (DLTS) measurements were used to study the origin of optical emissions in the 0.8–1.0 eV region of selected oxygen precipitated and dislocated silicon samples. It was shown that the D1 band, present in both types of samples, is the convolution of different sub-bands, narrowly spaced between 0.802 and 0.820 eV. The emission at 0.807 eV, assigned in the literature to dislocations, was found only in samples where dislocations were intentionally generated by plastic deformation or induced by the clustering of self-interstitials generated during the growth of oxide precipitates. A comparison of the results of PL, DLTS, and optical DLTS measurements allows the assignment of levels involved in the radiative recombination processes.

Rod‐like defects in CZ‐Si investigated by spin resonance and photoluminescence spectroscopies

“…Four distinct emissions occur in the 0.7-0.9 eV range, whose intensity and shape depends on the annealing conditions. Of these, the PL peak at 0.813 eV can be ascribed to a nuclei of oxide precipitates [5], while that at 0.86-0.87 eV may correspond to the D2 line of dislocation-related luminescence. According to [10], the PL peak at 0.903 eV could be associated with selfinterstitials, emitted during oxide precipitation.…”

“…Recently, the evolution of the structure of photoluminescence (PL) spectra of Cz-Si samples when subjected to annealing in the temperature range between 650 °C and 1000 °C was reported [5,6]. According to Mchedlidze et al [1], the SC1 EDSR signal also depended on the "thermal history" of the samples, however, a systematic study of the dependence was not performed.…”

Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar Cells

“…The 0.78-eV band is due to oxygen precipitates 15,16 and is differentiated from the D-lines. 7,17 Although the origin of the D-lines is still under debate, the grouping into D1/D2 lines and D3/D4 lines based on the similarity of their optical properties, the association of D3/D4 lines with inherent properties of dislocations, 18,19 and activation of the D-lines by heavy-metal impurity contamination 20,21 have been pointed out by several researchers. The intensity of the BB and 0.78-eV emissions at room temperature decreased after Fe contamination.…”

Дислокационная Фотолюминесценция В Кремнии, Имплантированном Ионами Фтора

“…Полуширины этих линий составляют ∼ 16 nm, что соответствует их значениям в образцах, полученных с помощью других технологических методов [2]. В спектрах ФЛ также наблюдается менее интенсивная линия с длиной волны 1476 nm, которая может принадлежать кис-лородному преципитату [4]. Линии краевой люминесценции также отсутствуют, что свидетельствует о достаточно большой концентрации центров безызлучательной рекомбинации.…”

“…Линии краевой люминесценции также отсутствуют, что свидетельствует о достаточно большой концентрации центров безызлучательной рекомбинации. Важно отметить, что, как и в случае образцов, имплантированных ионами Er, Ho, Yb, Si и О не происходит образования D3-и D4-центров, связанных с введением дислокаций, в отличие от случаев пластически деформированного кремния (путем четырехточечного изгиба [1], одноосного сжатия [5], изгиба [6] и облучения малоэнергетическими электронами [7]) или фор-мирования кислородных преципитатов [4,8]. После коротких отжигов в течение 0.25−0.5 h интенсивности D1-и D2-линий примерно одинаковы (рис.…”