Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition

Abstract

Silicon nitride films were deposited at low temperatures (245370 "Cj and high deposition rates @OO-1700 A/mm) by hot filament assisted chemical vapor deposition (HFCVD). Optical properties of these amorphous silicon nitride thin films have been extensively characterized by absorption, photoluminescence (PL), photoluminescence excitation, and electroluminescence measurements. The optical band gap of the films was varied between 2.43 and 4.74 eV by adjusting the flow rate of the disilane source gas. Three broad peaks at l&2.4, and 3.0 eV were observed in the PL spectra from these films. A simple qualitative model based on nitrogen and silicon dangling bonds adequately explains the observed PL features. The photoluminescence intensity observed in these films was S-10 times stronger than films de.posited by plasma enhanced chemical vapor deposition, under similar conditions. The high deposition rates obtained by HFCVD is believed to introduce a large number of these optically active defects. 0 199.5 Atnerican Zmstitme qf Physics.

Annealing effects on aSiNx grown by PECVD using different gas mixtures

“…Silicon nitride typically shows photoluminescence from radiative defects [5]. However, a systematic PL peak shift when changing the material stoichiometry (through controlled changes in deposition conditions) has been often reported [3,4,6,7].…”

Фотолюминесценция Аморфных И Кристаллических Кремниевых Нанокластеров В Сверхрешетках Из Нитрида И Оксида Кремния

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Down-shifting Si-based layer for Si solar applications

“…9b) and theoretical energy transitions [42][43][44][45][46][47] that may thus be associated to specific electronic transitions, as reported on Fig. 10.…”