Optical refractive index and static permittivity of mixed Zr–Si oxide thin films prepared by ion beam induced CVD

Ferrer, F. J.; Frutos, F.; Garcı́a-López, J.; González‐Elipe, Agustín R.; Yubero, F.

doi:10.1016/j.tsf.2007.07.139

Cited by 16 publications

(8 citation statements)

References 24 publications

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“…Refractive indexes around 1.5 and 1.6 were obtained for SiZ col and SiZrZ col coatings, respectively. On the other hand, the incorporation of colloidal zirconia does not increase the refractive index as expected [37], although it has been recently reported that thermal processing conditions play an important role in tailoring the index of sol-gel derived films [38]. The highest refractive index, n 2.0, was found for ZrCe coatings with very F. Rey-García et al, Planar optical waveguides via Sol-Gel 18/10/1224/10/10 10:0013:36 10 10 low thickness.…”

Section: Characterisation Of the Solssupporting

confidence: 69%

“…(hemos quitado todo lo de la difusión del Ti que no tiene sentido plantear) Esto It is well established, however, that a minimum, wavelength-dependent thickness value is required to guide visible or NIR light through a coating which acts as a planar waveguide [37]. Multiple sol-gel dip-coatings from 70SiO 2 -30TiO 2 and TMCe sols were thus prepared in order to increase the coating thickness to a minimum which allows enables performing useful laser waveguiding measurements.…”

Section: Deposition and Characterisation Of Coatingsmentioning

confidence: 99%

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Sol–gel coatings: An alternative route for producing planar optical waveguides

et al. 2011

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Inorganic and hybrid planar waveguides with different compositions (silica-titania, methacrylate-silica-cerium oxide, zirconia-cerium oxide and silica-zirconia) have been obtained by sol-gel synthesis followed by dip-coating. Soda-lime glass slides and conventional commercial window glass were used as substrates. The thickness and refractive index of the coatings were determined by profilometry and Spectroscopic Ellipsometry. Waveguide efficiency was measured at ca. 70% with a He-Ne laser beam, coupled with an optical microscope objective into and out of the waveguiding layer via a double prism configuration. Thicknesses between 150 and 2000 nm, along with refractive index values ranging between 1.45 and 1.99 (= 633 nm) were obtained depending on the sol composition and the dip-coating conditions. This wide range of values allows designing multilayered guides that can be used in a variety of applications.

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Section: Characterisation Of the Solssupporting

confidence: 69%

Section: Deposition and Characterisation Of Coatingsmentioning

confidence: 99%

Sol–gel coatings: An alternative route for producing planar optical waveguides

et al. 2011

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“…In a previous work it was shown that carboxylic and hydroxyl groups are incorporated into the zirconium silicate thin films [35]. This is corroborated by the IBA analysis.…”

Section: Discussionsupporting

confidence: 59%

Electrical characteristics of mixed Zr–Si oxide thin films prepared by ion beam induced chemical vapor deposition at room temperature

et al. 2009

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Mixed Zr-Si oxide thin films have been prepared at room temperature by ion beam decomposition of organometallic volatile precursors. The films were flat and amorphous. They did not present phase segregation of the pure single oxides. A significant amount of impurities (-C-, -CH x , -OH, and other radicals coming from partially decomposed precursors) remained incorporated in the films after the deposition process. This effect is minimized if the Ar content in the O 2 /Ar bombarding gas is maximized. Static permittivity and breakdown electrical field of the films were determined by capacitance-voltage and current-voltage electrical measurements. It is found that the static permittivity increases non-linearly from 4 for pure SiO 2 to~15 for pure ZrO 2 . Most of the dielectric failures in the films were due to extrinsic breakdown failures. The maximum breakdown electrical field decreases from~10.5 MV/cm for pure SiO 2 to~45 MV/cm for pure ZrO 2 . These characteristics are justified by high impurity content of the thin films. In addition, the analysis of the conduction mechanisms in the formed dielectrics is consistent to Schottky and Poole-Frenkel emission for low and high electric fields applied, respectively.

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“…Similar interpretation has been adopted for the other series of mixed oxide thin film samples [17,19,22,23]. The initial VF for pure SiO 2 is about 15% [18].…”

Section: / 26mentioning

confidence: 60%