Optimization of multiplexer architecture in VLSI circuits

Alluri, Sudhakar; Mounika, K.; Balaji, B.; Mamatha, D.

doi:10.1063/5.0059332

Cited by 3 publications

(1 citation statement)

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“…GaN can be operated at high temperatures, it has a wide band gap, high saturation velocity, and high critical field. For high-power applications, GaN is a suggestable and suitable material [3], [4]. GaN has balancing properties and more advantages compared to Si, SiC, GaN, and GaAs where it can withstand the performance of the transistor [5].…”

Section: Introductionmentioning

confidence: 99%

Design and performance analysis of front and back Pi 6 nm gate with high K dielectric passivated high electron mobility transistor

Gowthami

Balaji

Rao

2023

IJECE

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Advanced high electron mobility transistor (HEMT) with dual front gate, back gate with silicon nitride/aluminum oxide (Si3N4/Al2O3) as passivation layer, has been designed. The dependency on DC characteristics and radio frequency characteristics due to GaN cap layers, multi gate (FG and BG), and high K dielectric material is established. Further compared single gate (SG) passivated HEMT, double gate (DG) passivated HEMT, double gate triple (DGT) tooth passivated HEMT, high K dielectric front Pi gate (FG) and back Pi gate (BG) HEMT. It is observed that there is an increased drain current (Ion) of 5.92 (A/mm), low leakage current (Ioff) 5.54E-13 (A) of transconductance (Gm) of 3.71 (S/mm), drain conductance (Gd) of 1.769 (S/mm), Cutoff frequency (fT) of 743 GHz maximum oscillation frequency (Fmax) 765 GHz, minimum threshold voltage (V<sub>th</sub>) of -4.5 V, on resistance (Ron) of 0.40 (Ohms) at V<sub>gs</sub>=0 V. These outstanding characteristics and transistor structure of proposed HEMT and materials involved to apply for upcoming generation high-speed GHz frequency applications.

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Section: Introductionmentioning

confidence: 99%