Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate

Abstract

This work reports on the CVD heteroepitaxial growth of 3C-SiC layers on diamond (100) substrates. To obtain good layer quality, the growth procedure involves a “silicidation” step consisting in depositing a silicon layer by CVD on the diamond substrate, in order to elaborate a very thin SiC buffer layer. 3C-SiC growth is then performed on this SiC seeding layer. Silicidation and growth parameters have been studied in order to improve the quality and the morphology uniformity of the heteroepitaxial layer. The study points out the role of liquid silicon during the growth process.

Silicon Deposition on 3C-SiC Seeds of Different Orientations

“…2). Such morphology was already reported for Si deposition on diamond at similar temperature [7], implying the formation of a SiC interfacial layer between Si and diamond. Note that the same result is obtained when using 4H-SiC seed (not shown).…”