Optimization of Thin Si Oxynitride Films Produced by Rapid Thermal Processing for Applications in EEPROMs

Dutoit, M.; Letourneau, P.; Jing, Mi; Novkovski, N.; Manthey, J.; Zaldívar, Javier

doi:10.1149/1.2221086

Cited by 35 publications

(3 citation statements)

References 7 publications

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“…Some of these properties include better breakdown strength, higher electrical permittivity, improved barrier to impurity diffusion and superior resistance to plasma and radiation damage. These films are being widely employed as masking and passivation layers in microelectronics circuits, in particular in memory cells [1][2][3][4][5] and integrated optical components [6,7].…”

Section: Introductionmentioning

confidence: 99%

Compositional and electrical properties of ECR-CVD silicon oxynitrides

Hernández

Garrido

Martinez

et al. 1997

Semicond. Sci. Technol.

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Silicon oxynitride layers were deposited by electron cyclotron resonance (ECR) plasma enhanced chemical vapour deposition (PECVD). Oxygen, nitrogen and 5% argon diluted silane were used as precursors. The gas composition in the plasma was varied over a wide range to get compositions from pure SiO 2 to SiO x N y layers with around 20% O content. Large N 2 /O 2 flow ratios are required to get significant N concentrations in the SiO x N y deposited layers. Pure Si 3 N 4 layers could only be obtained when O 2 flow was completely suppressed. The infrared spectra of ECR SiO 2 are very similar to those of thermally grown oxides, but significant differences were found between the ECR and the high-temperature CVD Si 3 N 4 spectra. MOS devices fabricated with these layers show that the interface state density increases from about 10 11 to 10 12 cm −2 eV −1 when the layer composition changes from pure SiO 2 to pure Si 3 N 4 .

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Section: Introductionmentioning

confidence: 99%

Compositional and electrical properties of ECR-CVD silicon oxynitrides

Hernández

Garrido

Martinez

et al. 1997

Semicond. Sci. Technol.

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“…These layers are of variable composition and arereffered as silicon oxynitride (SiOxNy, Si-O-N). There are optimal conditions for nitridation [17], [18] leading to incorporation of about 6 % of a monoatomic layer of N atoms at the interface between the silicon and the oxide layer [19].…”

Section: Silicon Oxynitridementioning

confidence: 99%

Progress in Materials for Microelectronics and Further Challenges

Novkovski¹,

Skeparovski²,

Paskaleva³

et al. 2017

Contributions

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Development of materials and technologies for microelectronics is required by the needs of the constantly increasing level of integration of microelectronics circuits. Increase of the integration level compels downscaling of all the dimensions of devices, which in its turn requires very thin layers with exceptional quality due to rather high electric fields at working conditions. First, technological improvements are adopted aimed at fabrication of materials with uniform quality, geometrical flatness and extremely low density of intentionally introduced defects. Second, new fabrication methods are developed providing materials with much better quality. Third, new materials showing better properties than the standard (conventional) ones are obtained and developed further.Decreasing the dimensions of the layers changes the nature of the physical phenomena involved in the functioning of devices. Quantum mechanical mechanisms are more and more important in the description of the properties of the materials and devices on the nanoscale. The question arises where is the limit of the possibilities of the materials and technologies for nanoscale electronics.

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“…(vi) The nitridation study of the silicon dioxide gate dielectric which could further enhance device reliability and the IC yield [61][62][63][64][65][66].…”

Section: Oxidationmentioning

confidence: 99%

How will physics be involved in silicon microelectronics

Kamarinos

Felix

1996

J. Phys. D: Appl. Phys.

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By the year 2000 electronics will probably be the basis of the largest industry in the world. Silicon microelectronics will continue to keep a dominant place covering 99% of the 'semiconductor market'. The aim of this review article is to indicate for the next decade the domains in which research work in 'physics' is needed for a technological advance towards increasing speed, complexity and density of silicon ultra large scale integration (ULSI) integrated circuits (ICs). By 'physics' we mean here not only condensed matter physics but also the basic physical chemistry and thermodynamics. The review begins with a brief and general introduction in which we elucidate the current state of the art and the trends in silicon microelectronics. Afterwards we examine the involvement of physics in silicon microelectronics in the two main sections. The first section concerns the processes of fabrication of ICs: lithography, oxidation, diffusion, chemical and physical vapour deposition, rapid thermal processing, etching, interconnections, ultra-clean processing and microcontamination. The second section concerns the electrical operation of the ULSI devices. It defines the integration scales and points out the importance of the intermediate scale of integration which is the scale of the next generation of ICs. The emergence of cryomicroelectronics is also reviewed and an extended paragraph is dedicated to the problem of reliability and ageing of devices and ICs: hot carrier degradation, interdevice coupling and noise are considered. It is shown, during our analysis, that the next generation of silicon ICs needs mainly: (i) 'scientific' fabrication and (ii) microscopic modelling and simulation of the electrical characteristics of the scaled down devices. To attain the above objectives a return to the 'first principles' of physics as well as a recourse to nonlinear and non-equilibrium thermodynamics are mandatory. In the references we list numerous review papers and references of specialized colloquia proceedings so that a more detailed survey of the subject is possible for the reader.

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Optimization of Thin Si Oxynitride Films Produced by Rapid Thermal Processing for Applications in EEPROMs

Cited by 35 publications

References 7 publications

Compositional and electrical properties of ECR-CVD silicon oxynitrides

Compositional and electrical properties of ECR-CVD silicon oxynitrides

Progress in Materials for Microelectronics and Further Challenges

How will physics be involved in silicon microelectronics

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