2019
DOI: 10.1002/pssa.201900385
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Optimizing the Stoichiometry of Ga2O3 Grown by RF‐Magnetron Sputter Deposition by Correlating Optical Properties and Growth Parameters

Abstract: β‐Ga2O3 thin films are deposited by radiofrequency (RF)‐magnetron sputtering on quartz and c‐sapphire substrates using a ceramic stoichiometric Ga2O3 target and a constant flux of argon process gas. Oxygen flux, heater power, and sputtering power are varied in the synthesis of the layers. The resulting Ga2O3 layers are analyzed in terms of their structural and optical properties. Based on this analysis, the process parameters leading to the formation of an optimized β‐Ga2O3 layer are identified. The main chall… Show more

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Cited by 13 publications
(25 citation statements)
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“…The layer thicknesses obtained translate to growth rates of around 50–120 nm min −1 plasma on‐time. Compared with the growth rate of approximately 4–5 nm min −1 found for conventionally sputtered layers, this is a significant improvement.…”
Section: Resultsmentioning
confidence: 81%
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“…The layer thicknesses obtained translate to growth rates of around 50–120 nm min −1 plasma on‐time. Compared with the growth rate of approximately 4–5 nm min −1 found for conventionally sputtered layers, this is a significant improvement.…”
Section: Resultsmentioning
confidence: 81%
“…First, we will recap tendencies observed in the conventional RF sputter deposition of Ga 2 O 3 . The optical bandgap strongly depends on the deposition parameters oxygen flux, heating power, and RF power.…”
Section: Resultsmentioning
confidence: 96%
See 3 more Smart Citations