2021
DOI: 10.1007/s10854-021-05405-8
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Overview of residual stress in MEMS structures: Its origin, measurement, and control

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Cited by 33 publications
(12 citation statements)
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“…Integration of these metal nanoparticles in printable inks allows their incorporation in MEMS devices [22,[25][26][27]. Ligand-protected metal nanoparticles have shown extremely high ink stability.…”
Section: Liga Process Overviewmentioning
confidence: 99%
“…Integration of these metal nanoparticles in printable inks allows their incorporation in MEMS devices [22,[25][26][27]. Ligand-protected metal nanoparticles have shown extremely high ink stability.…”
Section: Liga Process Overviewmentioning
confidence: 99%
“…Residual stresses are known to be of significant importance for MEMS structures and have multiple points of origin, including defects present within the film. [57][58][59] Various studies in the literature have previously reported on the residual stress of silicon nitride. [60][61][62] In the current design, it is desirable to achieve silicon nitride films with a slight tensile stress, as this results in flat MEMS structures which in our case while unactuated state were characterized to remain flat within 10 nm over the distance of 152 nm between the anchors.…”
Section: Sin X Photonic Switchmentioning
confidence: 99%
“…Accelerometers, relays, and gyroscopes are usually processed by SOG (silicon on glass) technology, which is relatively simple and has a very low parasitic capacitance [32][33][34]. The structure was manufactured with SOG.…”
Section: Fabricationmentioning
confidence: 99%