Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS₂

Abstract

Monolayer molybdenum disulfide (MoS2) has attracted great interest due to its potential applications in electronics and optoelectronics. Ideally, single-crystal growth over a large area is necessary to preserve its intrinsic figure of merit but is very challenging to achieve. Here, we report an oxygen-assisted chemical vapor deposition method for growth of single-crystal monolayer MoS2. We found that the growth of MoS2 domains can be greatly improved by introducing a small amount of oxygen into the growth environment. Triangular monolayer MoS2 domains can be achieved with sizes up to ∼350 μm and a room-temperature mobility up to ∼90 cm(2)/(V·s) on SiO2. The role of oxygen is not only to effectively prevent the poisoning of precursors but also to eliminate defects during the growth. Our work provides an advanced method for high-quality single-crystal monolayer MoS2 growth.

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

“…CVD‐grown graphene has made great breakthrough in the growth of large‐area graphene 17, 155, 156, 157, 158, 159, 160. Recently, the synthesis of 2DLMs via CVD methods has been illustrated in many reports especially for MoS 2 ,30, 31, 161, 162, 163, 164, 165, 166, 167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 178, 179, 180, 181, 182, 183, 184, 185 which also shows promising applications in electronics and optoelectronics. Up to now, there are several reports on synthesizing 2D GIVMCs nanoflakes via CVD method, which is still at the initial stage.…”

The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2

“…Monolayer MoS2 with twin GB was gown via van der Waals epitaxy on sapphire through low pressure oxygen-assisted CVD [19] (see Section 3.1) and then transferred from sapphire onto a SiO2 (300 nm thick)/Si substrate by wet chemical etching (see Section 3.2). There are only two lattice orientations for MoS2 (0° and 180°) due to the epitaxial growth mechanism, and two types of grain boundaries (0° grain boundary and twin grain boundary).…”

A study on the interaction between molybdenum disulfide and rhodamine B by spectroscopic methods

“…Therefore, individual layers can be isolated using different techniques. There are various methods to prepare single-and multi-layered MoS 2 such as mechanical exfoliation, lithium intercalation and exfoliation, liquid phase exfoliation, and chemical vapor deposition [16][17][18][19]. For the liquid phase exfoliation method, layered compounds can be directly exfoliated by sonication in suitable selected solvents like N-methyl-2-pyrrolidone (NMP) and Dimethylformamide (DMF).…”