Oxygen controlled E-beam evaporation deposited p-SnOx thin film for photosensitive devices

Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

“…Since this report, the fabrication process involving the low-temperature deposition and subsequent PDA using various deposition methods such as evaporation, sputtering, ALD, and so on have been extensively utilized due to its convenience and broad compatibility with the transistor fabrication techniques. [40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58] Early research of SnO focused primarily on characteristic enhancement through optimization of the fabrication process.…”

Experimental Investigation and DFT Study of Tin-Oxide for Its Application as Light Absorber Layer in Optoelectronic Devices

“…Furthermore, tin-oxides (SnO) have been studied recently by a few researchers for use in organic solar cells, thin film transistors, hole transport layers, etc., [9]. According to studies, important SnO features like band gap, carrier concentration, mobility, etc., vary drastically with the increasing oxygen compositional ratio in SnO film [10]- [12]. Wavelength dependent extinction coefficient and bandgap of SnO are some of important parameters owing to its application as light absorber layer for photosensitive devices.…”

“…Band gap of SnO films for its different tin and oxygen ratio have been extracted by Tauc plot as shown in the figure 6 (b). From figure , it is observed that band gap increases with an increase in the Sn:O ratio, which is mainly due to the fact that with an increase in oxygen ratio of SnO film, its properties highly tends to toward the SnO 2 (Tin-dioxide) nature [12], [22], [23]. We extended the experimental study further to investigate the electrical parameters of SnO films for its different composition of Sn and O ratios using Hall measurement in order to find out nature of SnO films, its carrier concentration, Hall mobility and sheet resistivity using equations given below.…”