2005
DOI: 10.1889/1.2036443
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P-172L: Late-News Poster: Highly Stable Integrated Gate Driver Circuit using a-Si TFT with Dual Pull-down Structure

Abstract: This is the first report on real XGA AMLCD for NBPC with highly stable integrated gate driver circuits using a-Si TFT. The new circuit has been designed with dual-pull down structure for high reliability and has been working for over 2,000 hours at 60 o C, which is sufficient working time for normal driving conditions.

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Cited by 52 publications
(25 citation statements)
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“…6. The low gate voltage level of the proposed gate driver is lower than that of the conventional gate driver during the transient of the gate output signal [17]. Fig.…”
Section: Operation Of Proposed Gate Drivermentioning
confidence: 89%
See 1 more Smart Citation
“…6. The low gate voltage level of the proposed gate driver is lower than that of the conventional gate driver during the transient of the gate output signal [17]. Fig.…”
Section: Operation Of Proposed Gate Drivermentioning
confidence: 89%
“…In the condition with the same falling time of gate signal, the size of the proposed gate driver is smaller than that of conventional gate driver. The sizes of the proposed circuit are summarized in Table I and the comparison of the layout between the conventional gate driver [17] and the proposed gate driver is shown in Fig. 12.…”
Section: Effect Of the Proposed Gate Drivermentioning
confidence: 99%
“…Hydrogenated amorphous silicon (a‐Si:H) is widely used in active‐matrix liquid‐crystal displays (LCDs) and peripheral driver circuits because it has high uniformity and low cost of the fabrication. Recently, the integration of gate drivers with the a‐Si:H TFTs on glass substrates provides many advantages, including improvement on compactness and reliability, reduction in the cost by eliminating external driver integrated circuits (ICs) and related bonding connections, and simplification of data driver configuration …”
Section: Introductionmentioning
confidence: 99%
“…Recently, the integration of gate drivers with the a-Si:H TFTs on glass substrates provides many advantages, including improvement on compactness and reliability, reduction in the cost by eliminating external driver integrated circuits (ICs) and related bonding connections, and simplification of data driver configuration. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] However, the design of the gate driver using a-Si:H thin-film transistor (TFT) is confronted with some difficulties such like long-term stress degradation, low-effect field mobility, and the lack of a P-type transistor to build the complementary metal-oxide-semiconductor (CMOS) structure. For the high resolution display application, the thousands micrometer width of the main driving TFT is required to drive the gate line of the panel; the modification results in widening the bezel of panel.…”
Section: Introductionmentioning
confidence: 99%
“…Displays for portable electronic devices require high resolution, light‐weight, and low power consumption. Therefore, the integrated gate driver using amorphous silicon (a‐Si) technology for the thin‐film‐transistor liquid‐crystal display (TFT‐LCD) has become the main stream because of the mature manufacturing, low‐cost processing, and elimination of the gate driver ICs . Nevertheless, design of the integrated gate driver by a‐Si encounters three main challenges, which are the low field‐effect mobility, low reliability issue under high voltage stress, and the lack of P‐type transistor.…”
Section: Introductionmentioning
confidence: 99%