P‐41: Investigation of the Photon‐Enhanced Bias Instability of InGaZnO TFTs for the Application of Transparent AM‐OLED Displays

Ryu, Min Ki; Park, Sang‐Hee Ko; Yang, Shin Hyuk; Byun, Chun‐Won; Kwon, Oh‐Min; Park, Eun-Suk; Cho, Kyoung Ik; Hwang, Chi‐Sun

doi:10.1889/1.3499954

Cited by 11 publications

(8 citation statements)

References 3 publications

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“…40 To clarify the effect, we investigated the dependency of the BG IGZO TFT bias stability on the oxygen partial pressure. 41 While the V th shift for the IGZO TFT processed at the optimized oxygen partial pressure was negligible, the TFT processed at a higher oxygen partial pressure shifted to the positive direction by +2.2 V with the absence of SS variation under a bias stress for 10,000 sec at V g = 20 V. The result may be explained in two different ways as follows. Firstly, an optimum or smaller amount of oxygen would reduce the negatively charged oxygen plasma damage on the insulator, which in turn lowers the trap density in the gate insulator and/or at the interface.…”

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confidence: 94%

Device reliability under electrical stress and photo response of oxide TFTs

Park¹,

Ryu²,

Yoon³

et al. 2010

J Soc Info Display

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Abstract— The stability of oxide TFTs has been the main focus of this research and is probably the most crucial requirement for the successful application to flat‐panel displays. Although the high Fermi level of oxide semiconductors makes TFTs basically stable under electrical stress, the device reliability under diverse variations of electrical stress is affected by materials such as active semiconductors and gate insulators, processes for the formation of back/front channels and passivation layers, and device configurations among other things. How these factors affect the device reliability have been investigated and a review of the stability is presented. In addition, several categories of the light instability of oxide TFTs is presented and the origin is discussed.

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confidence: 94%

Device reliability under electrical stress and photo response of oxide TFTs

Park¹,

Ryu²,

Yoon³

et al. 2010

J Soc Info Display

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“…Since most of the proposed usages of a-IGZO TFTs may have to expose them to a backlight or ambient light during operation, it is quite necessary to investigate the device instability under light illumination or even bias-stress at the same time. 8,9) The model based on electron-hole pair (EHP) generation under light illumination was firstly proposed to explain the instability of metal oxide TFTs against negative bias illumination stress (NBIS) and positive bias illumination stress (PBIS). [10][11][12][13][14] On the other side, the photo-transition model from the oxygen vacancy (V O ) to the ionized oxygen vacancy (V O…”

Section: Introductionmentioning

confidence: 99%

Light illumination stability of amorphous InGaZnO thin film transistors with sputtered AlO_xpassivation in various thicknesses

Zhou

et al. 2014

Jpn. J. Appl. Phys.

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Light illumination stability of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) passivated by sputtered AlO x thin films were investigated in this paper. Light wavelength and passivation-layer thickness were intentionally controlled to ascertain the related two physical mechanisms, i.e., electron-hole pair (EHP) generation and oxygen vacancy (V O ) formation. A qualitative model was proposed to effectively compare and distinguish the above two mechanisms in thermal stability of a-IGZO TFTs with passivation layers. With light wavelength decreasing EHP generation became evident where the "threshold wavelength" was between 420 and 400 nm for the a-IGZO TFTs used in this study. Meanwhile, passivation-layer could significantly improve the stability of a-IGZO TFTs under long-wavelength light illumination by suppressing the escape of oxygen atoms to form V O in a-IGZO films. The "threshold thickness" of AlO x passivation-layer in our devices was estimated to be about 90 nm.

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“…1,2 This is because metal oxide exhibits high electron mobility, high transparency in visible region, simple low-cost deposition at temperature compatible with flexible substrates, and good stability in air. 3,4 There have been many reports on metal oxides for transistors, such as ZnO, 5,6 In-Ga-Zn-O (IGZO), 7,8 Hf-In-Zn-O (HIZO), 9,10 and Si-In-Zn-O (SIZO) 11 et al…”

Section: Introductionmentioning

confidence: 99%

Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness

Ding

Zhang

et al. 2013

AIP Advances

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RF magnetron sputtered HfInZnO film and atomic layer deposition (ALD) Al2O3 film were employed for thin film transistors (TFTs) as channel layer and gate insulator, respectively. To achieve HfInZnO-TFT with high performance and good bias stability, the thickness of HfInZnO active layer was optimized. The performance of HfInZnO-TFTs was found to be thickness dependent. As the HfInZnO active layer got thicker, the leakage current greatly increased from 1.73 × 10−12 to 2.54 × 10−8 A, the threshold voltage decreased from 7.4 to −4.7 V, while the subthreshold swing varied from 0.41 to 1.07 V/decade. Overall, the HfInZnO film showed superior performance, such as saturation mobility of 6.4 cm2/V s, threshold voltage of 4.2 V, subthreshold swing of 0.43 V/decade, on/off current ratio of 3 × 107 and Vth shift of 3.6 V under VGS = 10 V for 7200 s. The results demonstrate the possibility of fabricating TFTs using HfInZnO film as active layer and using ALD Al2O3 as gate insulator

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P‐41: Investigation of the Photon‐Enhanced Bias Instability of InGaZnO TFTs for the Application of Transparent AM‐OLED Displays

Cited by 11 publications

References 3 publications

Device reliability under electrical stress and photo response of oxide TFTs

Device reliability under electrical stress and photo response of oxide TFTs

Light illumination stability of amorphous InGaZnO thin film transistors with sputtered AlO_xpassivation in various thicknesses

Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness

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P‐41: Investigation of the Photon‐Enhanced Bias Instability of InGaZnO TFTs for the Application of Transparent AM‐OLED Displays

Cited by 11 publications

References 3 publications

Device reliability under electrical stress and photo response of oxide TFTs

Device reliability under electrical stress and photo response of oxide TFTs

Light illumination stability of amorphous InGaZnO thin film transistors with sputtered AlOxpassivation in various thicknesses

Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness

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Light illumination stability of amorphous InGaZnO thin film transistors with sputtered AlO_xpassivation in various thicknesses