P‐8: a‐Si:H TFT‐LCD with Single Organic Passivation Layer

Abstract

A novel photosensitive organic material is used as the single organic passivation layer for the conventional back channel etched thin film transistors. We find that the leakage current of the a-Si:H TFTs with single organic passivation layer is lower than that of the conventional transistors with silicon nitride passivation layers and the adhesion strength between the organic layers and the pixel electrode is sufficiently strong so that the overlap between the ITO pixel electrode and the data lines can be formed. Using the novel materials, 1.9" qCIF AMLCD with single organic passivation layer was successfully fabricated with reduced process steps.

Recrystallisation Behaviour of an Fe-Mn-C-Si-Al TWIP

“…Fully austenitic high Mn steels have been developed recently to meet the automotive industry's need for high strength and improved formability [1,2,3]. These enhanced mechanical properties allow both downgauging and more complex forming operations for automotive parts.…”

Laser Direct Patterning of Organic Dielectric Passivation Layer for Fabricating Amorphous Silicon Thin-Film Transistors

“…[3][4][5] Recently, organic materials deposited on glass by spincoating or slit-coating have been developed as passivation layers on TFTs by photolithographic and development methods. [6][7][8][9][10] Laser photoablation is an efficient and versatile etching process in which particular regions in a passivation layer can be removed selectively by high-energy UV laser radiation in a one-step patterning process. Thus, it requires no photoresist development, etching, or other process steps before or after the exposure.…”