Panel Level Advanced Packaging

McCleary, Roger; Cochet, Philippe; Swarbrick, Tom; Sim, ChinTiong; Singh, Gajbir; Bum, Yong Chang; Aung, Andy Kyawoo

doi:10.1109/ectc.2016.280

Cited by 13 publications

(2 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To verify Eqs. ( 8), (11), (12), and ( 16), we first use 2D and 3D latent image simulations to make three predictions. Next, we validate our predictions by comparing latent image simulations to directly corresponding experimental data.…”

Section: Equation Validation: Simulations and Experimentsmentioning

confidence: 99%

“…Light propagation prediction and modeling enable ambitious photomask designs for film patterning that drive the cutting edge of 2.5D and 3D advanced packaging architectures with increased functionality, enhanced design versatility, reduced power consumption, small form factor and high bandwidth [1][2][3][4][5][6][7] . These qualities are essential for nextgeneration technologies in domains such as high-end computing, mobile devices, radio frequency (RF), automotive, space, artificial intelligence (AI), biotechnology and the Internet of Things (IoT) 4,[8][9][10][11] .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Methods for latent image simulations in photolithography with a polychromatic light attenuation equation for fabricating VIAs in 2.5D and 3D advanced packaging architectures

et al. 2021

View full text Add to dashboard Cite

As demand accelerates for multifunctional devices with a small footprint and minimal power consumption, 2.5D and 3D advanced packaging architectures have emerged as an essential solution that use through-substrate vias (TSVs) as vertical interconnects. Vertical stacking enables chip packages with increased functionality, enhanced design versatility, minimal power loss, reduced footprint and high bandwidth. Unlocking the potential of photolithography for vertical interconnect access (VIA) fabrication requires fast and accurate predictive modeling of diffraction effects and resist film photochemistry. This procedure is especially challenging for broad-spectrum exposure systems that use, for example, Hg bulbs with g-, h-, and i-line UV radiation. In this paper, we present new methods and equations for VIA latent image determination in photolithography that are suitable for broad-spectrum exposure and negate the need for complex and time-consuming in situ metrology. Our technique is accurate, converges quickly on the average modern PC and could be readily integrated into photolithography simulation software. We derive a polychromatic light attenuation equation from the Beer-Lambert law, which can be used in a critical exposure dose model to determine the photochemical reaction state. We integrate this equation with an exact scalar diffraction formula to produce a succinct equation comprising a complete coupling between light propagation phenomena and photochemical behavior. We then perform a comparative study between 2D/3D photoresist latent image simulation geometries and directly corresponding experimental data, which demonstrates a highly positive correlation. We anticipate that this technique will be a valuable asset to photolithography, micro- and nano-optical systems and advanced packaging/system integration with applications in technology domains ranging from space to automotive to the Internet of Things (IoT).

show abstract

Section: Equation Validation: Simulations and Experimentsmentioning

confidence: 99%