Paramagnetic defects in silicon irradiated with 40 MeV As ions

Electron paramagnetic resonance characterization of defects produced by ion implantation into silicon

“…The broad but anisotropic linewidth led Brower and Beezhold [15] to attribute the spectrum to point defects in heavily damaged but crystalline regions where the presence of strain and interactions between the defects broadens out separate lines into a single broad line. The location of these defects in the deeper and more heavily damaged regions where the nuclear stopping power is largest was confirmed by depth profiling measurements [5,9] that also showed that the well-defined P3 centres are mostly nearer to the surface in the more lightly damaged regions.…”

“…Corbett and Karins [2] summarized in 1981 the status of our knowledge of ion-induced defects in semiconductors and included a summary of EPR measurements. Since then there have been further EPR studies such as those by Glaser et al [3], Waddell et al [4], Yajima et al [5], Sealy et al [6][7][8], Dvurechenskii et al [9], Varichenko et al [10], Mukashev et al [11], Abdullin et al [12], Poirier et al [13] and O'Raifeartaigh et al [14].…”

“…Its importance lies in the fact that its intensity exceeds that of all other spectra over a wide fluence range. Despite this importance only a rather small number of EPR reports [5][6][7][8][9][10][14][15][16] refer to this spectrum. One aim of this paper is to give more attention to these defects by drawing together those measurements that deal with them.…”