Parameters of the tip arrays covered by low work function layers

Еvtukh, А.А.; Литовченко, В.Г.; Marchenko, R.I.; Klyui, N.I.; Semenovich, V.A.; Nelep, Constantin

doi:10.1109/ivmc.1995.487108

Cited by 6 publications

(3 citation statements)

References 6 publications

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“…The problems of decreasing applied voltage and field erosion and of increasing stability and uniformity of field emission (FE) are still important for FE electronic systems. A possible way to solve at least some of these problems is the covering of the conventional FE cathode tips with superthin films with strongly defined characteristics [1][2][3][4][5]. The covers have to passivate and homogenize the surface.…”

Section: Introductionmentioning

confidence: 99%

The enhanced field emission from microtips covered by ultrathin layers

Литовченко

Еvtukh

Marchenko

et al. 1997

J. Micromech. Microeng.

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The influence of different types of covering on electron field emission from silicon tips has been studied. For this a series of silicon tip array structures, namely (i) structures with porous silicon layers on the tops of the tips, (ii) tips covered with carbon films, (iii) silicon tips implanted by hydrogen, and (iv) cesium-enriched silicon tips, has been prepared and investigated. The comparison and characterization of various structures using effective work functions, field enhancement factors, and effective emission areas obtained from Fowler - Nordheim plots have been performed. Models and mechanisms of enhancement of the electron field emission have been proposed.

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Section: Introductionmentioning

confidence: 99%

The enhanced field emission from microtips covered by ultrathin layers

Литовченко

Еvtukh

Marchenko

et al. 1997

J. Micromech. Microeng.

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“…This representation is only possible if the PS work function is lower than that of the Si(P). The incorporation of H+ ions into the surface of the pores may explain this behavior [ 23 ]. Further, it is worth noting that whatever the bias sign and because of the presence of occupied and/or free surface states in the PS layer, a part of the electric field spreads systematically into it, resulting in the PS polarization and the screening of internal fields at the metal/PS interface, that is why the metal/PS contact can be considered as quasi-ohmic.…”

Section: Resultsmentioning

confidence: 99%

Non-oxidized porous silicon-based power AC switch peripheries

et al. 2012

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We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries.

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“…4,8 The cathodes were formed on ͑100͒ n-type Si wafers ͑N d =10 15 cm −3 ͒ by patterning with Si 3 N 4 as a masking material. The arrays of initial silicon emitter tips were fabricated using the method for the formation of silicon points by wet chemical etching.…”

Section: Si Tip Array Preparationmentioning

confidence: 99%

Electrical and emission properties of nanocomposite SiOx(Si) and SiO2(Si) films

Еvtukh¹,

Литовченко²,

Semenenko³

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEnhanced field emission from cerium hexaboride coated multiwalled carbon nanotube composite films: A potential material for next generation electron sources The electrical and emission properties of as deposited and annealed SiO x ͑Si͒ films have been investigated. The films with thicknesses of 10-100 nm were obtained by thermal evaporation of silicon powder in vacuum ͑2.7-4.0͒ ϫ 10 −3 Pa on flat Si substrates and Si tip arrays. The atomic force microscopy investigations of the surface morphology indicated the presence of nanoprotrusions on surface of the initial SiO x ͑Si͒ films with height up to 20 nm and curvature radius of the nanoprotrusions about 3 -5 nm. As a result of the thermal annealing, the film surface becomes more uniform and its morphology is characterized by nanoprotrusions with height in the range of 1 -3 nm. At low electric fields the I-V characteristics of dark current through the initial SiO x ͑Si͒ films correspond to Poole-Frenkel transport mechanism. The Fowler-Nordheim tunneling dominates at higher electric fields. As to annealed SiO 2 ͑Si͒ films, the modified Fowler-Nordheim electron tunneling through trapezoidal SiO 2 barrier between silicon nanoclusters restricts the current flow. The effective electron field emission from Si tip arrays coated with nanocomposite SiO x ͑Si͒ and SiO 2 ͑Si͒ films was observed. The results of the electron field emission from surface of SiO x ͑Si͒ films into vacuum show an emission current density of 0.25ϫ 10 −5 A/cm 2 at macroscopic electric fields of ͑5-6͒ ϫ 10 5 V / cm. The field emission from thermally annealed samples was not observed in the whole range of the applied voltages. In the contrary, for the case of thermally annealed samples subjected to the following partial etching in HF : H 2 O solution, the emission increases in comparison with initial samples. In this case the field emission appears already at an electric field of 1.5ϫ 10 5 V / cm and the maximum current density increases up to the value of ϳ3 ϫ 10 −5 A/cm 2 . The current peaks are revealed on emission I͑V͒ characteristics built in J͑E͒ coordinates. The models for explanation of peculiarities of the electrical conductivity and electron field emission from nanocomposite films are discussed.

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Parameters of the tip arrays covered by low work function layers

Cited by 6 publications

References 6 publications

The enhanced field emission from microtips covered by ultrathin layers

The enhanced field emission from microtips covered by ultrathin layers

Non-oxidized porous silicon-based power AC switch peripheries

Electrical and emission properties of nanocomposite SiOx(Si) and SiO2(Si) films

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