Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

Zheng, Qiwen; Yu, Xuefeng; Cui, Jiangwei; Guo, Qi; Ren, Dazhong; Cong, Zhong-Chao; Zhou, Hang

doi:10.1088/1674-1056/23/10/106102

Cited by 6 publications

(3 citation statements)

References 17 publications

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“…The impact of TID on the stability of SRAM cell has been investigated for several decades. [3][4][5][6][7][8][9][10][11][12][13] TID will result in a preferred state and non-preferred state in SRAM cell. That is, SNM of data applied on cell during TID exposure is increased, whereas SNM of TID complement data is decreased.…”

Section: Introductionmentioning

confidence: 99%

“…In general, SNM of SRAM before and after TID irradiation is determined by circuit simulation with the irradiated transistor model. [6,[9][10][11][12][13] Simulation results are experimentally verified by single event upset (SEU) characterization [3,[5][6][7][8] or background data [4,11] testing indirectly, according to the relationship between SNM and SEU cross section, and background data distribution. TID induced asymmetry in SRAM cell stability is experimentally verified by unbalanced SEU cross section for TID data and TID complement data, and TID pattern imprinting in background data.…”

Section: Introductionmentioning

confidence: 99%

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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin*

Zheng¹,

Cui²,

Liu³

et al. 2017

Chinese Phys. B

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In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin (SNM) is specifically designed and irradiated by gamma-ray. Both data sides’ SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side’s SNM is decreased and the other data side’s SNM is increased. Moreover, measurement of SNM under different supply voltages (V dd) reveals that SNM is more sensitive to TID under lower V dd. The impact of TID on SNM under data retention V dd should be tested, because V dd of SRAM cell under data retention mode is lower than normal V dd. The mechanism under the above results is analyzed by measurement of I—V characteristics of SRAM cell transistors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin*

Zheng¹,

Cui²,

Liu³

et al. 2017

Chinese Phys. B

Self Cite

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“…[3−6] The RINCE plays a crucial role in TID responses of SRAM cells, because minimum or nearly minimum-geometry transistors are commonly used in SRAM cells. [7,8] The threshold shift of narrow-width channel transistors induced by RINCE is bias-dependent. Bias dependences of RINCE for 180 nm and 130 nm NMOS-FETs have been explored by Gaillardinet al [3] and Gonella et al [4] The experimental results show that NMOSFET biased ON during irradiation has a larger threshold shift than that biased OFF.…”

mentioning

confidence: 99%

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs

Zheng¹,

Cui²,

Wei³

et al. 2018

Chinese Phys. Lett.

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The bias dependence of radiation-induced narrow-width channel effects (RINCEs) in 65-nm n-type metal-oxidesemiconductor field-effect transistors (NMOSFETs) is investigated. The threshold voltage of the narrow-width 65nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65nm technology.

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Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET

Hao

Liao

et al. 2017

Microelectronics Reliability

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Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

Cited by 6 publications

References 17 publications

Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin*

Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin*

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs

Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET

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