Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On 2002
DOI: 10.1109/iit.2002.1258051
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Performance characteristics of the Varian Semiconductor VIISta 3000 single wafer high energy ion implanter

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Cited by 3 publications
(2 citation statements)
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“…As shown in Fig.1, the full beam line 3D optics model predicts the beam angle variations on VIISta3000 [1] [2]. All the beam optics elements are assembled together with their real position based on the mechanical model.…”
Section: Beam Optics Modelmentioning
confidence: 99%
“…As shown in Fig.1, the full beam line 3D optics model predicts the beam angle variations on VIISta3000 [1] [2]. All the beam optics elements are assembled together with their real position based on the mechanical model.…”
Section: Beam Optics Modelmentioning
confidence: 99%
“…The VIISta 3000 is a high energy implanter while the 810HP serves the medium current segment of the implant market. Both the VIISta 3000 [2][3][4] and the VIISta 810HP [5] have been described thoroughly elsewhere. This paper will describe the goals of the source design and the performance of the IHC ion sources.…”
Section: Introductionmentioning
confidence: 99%