Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms

“…Amorphous oxide semiconductors (AOS) have been extensively investigated as candidates for high-performance display technologies because of a high carrier mobility, low off-state current (I off ), excellent optical transparency, and low process temperature. [1][2][3][4] However, new emerging industries, such as 5G, artificial intelligence, and virtual reality, require high-resolution and fast-response displays, which in turn require thin-film transistors (TFTs) with high mobility. These goals can be achieved by using element doping, [5] plasma treatment, [2] and which is typically used for layer-by-layer construction of a highquality film with a stoichiometric ratio that enables accurate control of the film thickness and growth temperature.…”

“…[1][2][3][4] However, new emerging industries, such as 5G, artificial intelligence, and virtual reality, require high-resolution and fast-response displays, which in turn require thin-film transistors (TFTs) with high mobility. These goals can be achieved by using element doping, [5] plasma treatment, [2] and which is typically used for layer-by-layer construction of a highquality film with a stoichiometric ratio that enables accurate control of the film thickness and growth temperature. The mobility of In 2 O 3 /IGZO TFTs was critically assessed using a gated four-probe (GFP) and the transfer length method (TLM).…”

“…[ 1–4 ] However, new emerging industries, such as 5G, artificial intelligence, and virtual reality, require high‐resolution and fast‐response displays, which in turn require thin‐film transistors (TFTs) with high mobility. These goals can be achieved by using element doping, [ 5 ] plasma treatment, [ 2 ] and metal‐capping layers. [ 6–8 ] However, the formation of a bilayer structure is the simplest way to achieve these goals, i.e., using a very thin semiconductor with a high carrier concentration that is stacked with a low‐mobility but stable AOS layer to obtain high‐mobility and high‐stability TFTs.…”

Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations

“…Unfortunately, TFT devices containing Ga/Zn active layer generally suffer from high humidity sensitivity, which is detrimental to the stability and performance of the devices [13,14]. Furthermore, heat treatment is a prerequisite for most IGZO-based TFTs to achieve superior device performances [15][16][17][18], which hinders their application in flexible electronics. Therefore, the development of non-annealed Ga/Zn oxide-free semiconductor materials becomes an essential technology for new-concept flexible TFT devices.…”