Performance improvement of timing and power variations due to random dopant fluctuation in negative‐capacitance CMOS inverters

Zhang, Kai; Lü, Weifeng; Si, Peng; Zhao, Zhifeng; Yu, Tianyu

doi:10.1049/iet-cds.2020.0101

Cited by 3 publications

(1 citation statement)

References 34 publications

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“…Several works have demonstrated that the NC effect can improve the performance of RDF-induced variability for conventional IM-FETs as well as planar NCFETbased CMOS circuits [18][19][20]. However, the NC effect on RDF-induced variations in JL triple-gate fin-type FET (JL-FinFET) has not been understood profoundly yet.…”

Section: Introductionmentioning

confidence: 99%

Reduction of Random Dopant Fluctuation-induced Variation in Junctionless FinFETs via Negative Capacitance Effect

2021

Informacije MIDEM

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In this study, we investigated the impact of random dopant fluctuation (RDF) on junctionless (JL) fin field-effect transistors (FinFETs) with ferroelectric (FE) negative capacitance (NC) effect. The RDF-induced variations were captured by using built-in Sano methodology in three-dimensional technology computer-aided design (TCAD) simulation. Compared to the regular JL-FinFETs, the variations in JL-FinFETs with NC effect (NCJL-FinFETs) was observed to be less via statistical Monte Carlo analysis, which further enhanced its performance as well. The evaluation and estimation of threshold voltage (V T ), ON-state current (I on ), OFF-state current (I off ), and subthreshold swing (SS) by different FE layer thicknesses indicated reduction in the standard deviations of VT (δV T ) and Ion (δI on ) by 34.7% and 7.08%, respectively; the OFF-state current and its standard deviation shrank by approximately three orders of magnitude than the JL-FinFET counterpart. Although δSS was not monotonous, the SS was significantly improved to sub-60 mV/decade. To sum up, the regular JL-FinFETs containing the FE layer as NC effect not only improved the electrical performance, but also led to the resilience of the RDF-induced statistical variability.

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Section: Introductionmentioning

confidence: 99%

Reduction of Random Dopant Fluctuation-induced Variation in Junctionless FinFETs via Negative Capacitance Effect

2021

Informacije MIDEM

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Comprehensive performance enhancement of a negative-capacitance nanosheet field-effect transistor with a steep sub-threshold swing at the sub-5-nm node

Lü

Chen

Liu

et al. 2022

Microelectronics Journal

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Performance Evaluation of Negative-Capacitance Fin-Type Field Effect Transistor-Based Static Random-Access Memory with Mixed-Mode Simulation

Chen

Lü

Liu

et al. 2021

Journal of Nanoelectronics and Optoelectronics

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Electrical characteristics of fin-type field-effect transistor with negative capacitance effect (NCFinFET) are investigated coupled with the Landau-Khalatnikov equation for ferroelectric materials in this study. Moreover, Technology Computer Aided Design (TCAD) mixed-mode simulation is carried out to evaluate and compare the performance of NCFinFET-based static random access memory cell (NC-SRAM) with a traditional FinFETbased SRAM one. It is shown NC-SRAM has higher static noise margin (SNM) and better anti-interference capability than conventional SRAM with the same supply voltage. The static read, hold, and write noise margins (RSNM, HSNM, and WSNM, respectively) for NC-SRAM increased by 10%, 30%, and 15%, respectively, and the access disturb stability improved by 80%. Simulation results also reveal that the read stability increases with increasing ferroelectric layer thickness, while the write stability exhibits a non-monotonic trend with ferroelectric layer thickness for NC-SRAM.

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Performance improvement of timing and power variations due to random dopant fluctuation in negative‐capacitance CMOS inverters

Cited by 3 publications

References 34 publications

Reduction of Random Dopant Fluctuation-induced Variation in Junctionless FinFETs via Negative Capacitance Effect

Reduction of Random Dopant Fluctuation-induced Variation in Junctionless FinFETs via Negative Capacitance Effect

Comprehensive performance enhancement of a negative-capacitance nanosheet field-effect transistor with a steep sub-threshold swing at the sub-5-nm node

Performance Evaluation of Negative-Capacitance Fin-Type Field Effect Transistor-Based Static Random-Access Memory with Mixed-Mode Simulation

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