Performance of RF sputtered V2O5 interface layer in p-type CdTe/Ag Schottky diode

Raj, Rishabh; Gupta, Himanshu; Purohit, L.P.

doi:10.1016/j.optmat.2022.112176

Cited by 11 publications

(3 citation statements)

References 34 publications

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“…One of the most common methods of measuring the resistivity of thin materials is the two-probe method [40,41]. Silver contacts were deposited on the films by a process of thermal evaporation in a vacuum chamber [42]. The electric resistivity of CdSe and CdSe:Te thin films was measured by using two probe methods in which the space between probes (s) was 1 cm.…”

Section: I-v Characteristicsmentioning

confidence: 99%

Investigation the effect of dopant Te on CdSe thin films deposited by RF magnetron sputtering method

et al. 2023

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CdSe and CdSe:Te thin films were grown on glass substrates by RF magnetron sputtering. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The microscopic images of the films were found to be uniform and homogeneous in nature with a uniform grain and no cracks, and the grain size of CdSe was higher than CdSe:Te thin film. CdSe:Te thin film shows a higher absorption coefficient compared to CdSe in the visible region. The Energy band gaps were found to be 2.01 and 1.73 eV for CdSe and CdSe:Te thin films, respectively. The incorporation of Te atom into the CdSe structure has enhanced the mobility and changed the type of conductivity from n-type to p-type.

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Section: I-v Characteristicsmentioning

confidence: 99%

Investigation the effect of dopant Te on CdSe thin films deposited by RF magnetron sputtering method

et al. 2023

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“…Rare earth materials are most frequently employed for MIS-type SBDs because of their broad bandgap and high k-dielectric characteristics. In order to separate the electrical characteristics and current transport methods, some researchers have developed rare-earth-based MIS SBDs [3][4][5][6][7][8]. Also, rare earth ions that have been doped with lanthanum phosphate mostly depend on physical factors such as growth mechanisms, particle size, shape, and dopant percentage [9].…”

Section: Introductionmentioning

confidence: 99%

Heterojunction structure for high electrical performance of Cu/Sn-LaPO 4 /n-Si type Schottky barrier diode

Mariappan

Priya

Bakkiyaraj

et al. 2023

Preprint

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The Cu/Sn-LaPO4/n-Si MIS Schottky barrier diode (SBD) with a 10% Sn doping has been successfully fabricated, and their photodiode properties were investigated. The I-V forward and reverse bias curves determine the photodiode parameters such as barrier height, ideality factor, and saturation currents from the thermionic emission theory. The results of the experiments with 10% Sn-LaPO4 SBDs showed a linear decrease in the ideality factor (n) up to 2.31 and 1.74, respectively, with a small increase in the effective barrier height (𝛟B) of 0.744 and 0.806 eV in dark and light conditions these results signify their use in optoelectronic industries.

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“…An optical glass slides (75 x 25 x 1 mm 3 ) was used as substrates. The substrates were cleaned using distilled water and various organic solvents [10][11]. Also, it is cleaned by ultrasonic method.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Studies of Boric Acid Doped Cadmium Oxide Thin Film by JNSP Technique for Optoelectronic Applications

Bharathikannan²,

Kavin³

et al. 2022

Front. Adv. Mater. Res.

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The present work deals with preparation and characterization of boric acid (b) dopped cdo thin films by the jet nebulizer spray pyrolysis technique at optimized temperature 450°C. Boric acid doped cdo thin films were prepared by jet nebulizer spray pyrolysis technique with different wt% of boric acid (x=0, 0.5,2.5, 4). The xrd pattern of various weight percentage boric acid dopped cdo thin films show the polycrystalline nature with cubic structure. At room temperature, the electrical conductivity of the prepared films increases with 4Wt% of 2.32x10-3 S/cm. The plot of voltage versus current as a function of temperature (RT-30°C) indicates the ohmic behavior of the films. Moreover, significant optoelectronic applications are cadmium oxide dopped with boric acid thin films at room temperature electrical resistivity is in the order of 101Ω cm which is low enough to be a good supercapacitor electrode material.

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Performance of RF sputtered V2O5 interface layer in p-type CdTe/Ag Schottky diode

Cited by 11 publications

References 34 publications

Investigation the effect of dopant Te on CdSe thin films deposited by RF magnetron sputtering method

Investigation the effect of dopant Te on CdSe thin films deposited by RF magnetron sputtering method

Heterojunction structure for high electrical performance of Cu/Sn-LaPO 4 /n-Si type Schottky barrier diode

Structural and Electrical Studies of Boric Acid Doped Cadmium Oxide Thin Film by JNSP Technique for Optoelectronic Applications

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