Perpendicular Magnetic Tunneling Junction With Double Barrier Layers for MRAM Application

Cabrera, A.C.; Chang, Chih‐Ju; Hsu, Chih-Cheng; Weng, M.C.; Chen, C.C.; Chao, C. T.; Wu, Jong-Ching; Chang, Yang-Hua; Wu, Te‐Ho

doi:10.1109/tmag.2006.888503

Cited by 15 publications

(3 citation statements)

References 6 publications

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“…Hence, in principle, p-MTJs have a higher potential in achieving both high Δ and low I C0 simultaneously. In this regard, many materials possessing perpendicular anisotropy, such as rare-earth=transition metal alloys, [48][49][50][51][52][53][54][55] L1 0 -(Co,Fe) based ordered alloys, 56,57) and multilayers, [58][59][60][61][62][63][64][65][66][67][68] have been explored. However, none of these materials simultaneously exhibited the desired values for all three of the important metrics for p-MTJs.…”

Section: Introductionmentioning

confidence: 99%

Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm

Sato

Ikeda

Ohno

2017

Jpn. J. Appl. Phys.

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Magnetic tunnel junctions with a perpendicular easy axis (p-MTJs) have been intensively developed since CoFeB/MgO p-MTJs were shown to have high potential in satisfying major requirements for use in practical applications. CoFeB/MgO-based p-MTJs are becoming the de facto standard in spin-transfer-torque magnetoresistive random access memory and spintronics-based very large scale integrated circuits. In this paper, we review, based on our efforts, the properties of standard CoFeB/MgO based p-MTJs as well as p-MTJs using high-anisotropy Co-based multilayers combined with the CoFeB/MgO system at a junction diameter of less than 20 nm.

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Section: Introductionmentioning

confidence: 99%

Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm

Sato

Ikeda

Ohno

2017

Jpn. J. Appl. Phys.

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“…[33] 4. [35] In 2007, a TMR ratio of 74% was obtained in double barrier p-MTJ with GdFeCo/AlO x /GdFeCo/FeCo/AlO x /FeCo/TbFeCo stack structure by Cabrera et al [36] In 2008, Nakayama et al studied spin-transfer switching in the TbCoFe/CoFeB /MgO/CoFeB/TbCoFe MTJ with a TMR ratio about 15%, current density of 4.7 MA/cm 2 and thermal stability factor of 107 at RT, shown in Fig. 5.…”

Section: Perpendicular Magnetic Anisotropy Materialsmentioning

confidence: 97%

Perpendicular magnetic tunnel junction and its application in magnetic random access memory

Liu¹,

Ali²,

Han³

2014

Chinese Phys. B

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Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L1 0 -ordered (Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au] N , and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.

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“…Recently, it has been reported that rare-earth-transition-metal (RE-TM) alloys [4], [5] and thin-film binary multilayers [6] have been used as magnetic layers in pMTJ fabrication. Compared with the RE-TM structures, corrosion resistance of Co, Pt, and Pd is superior to that of the rare-earth elements [7], and Co/Pt multimalyers may have a smaller resistance-area product than that of RE-TM alloys.…”

Section: Introductionmentioning

confidence: 99%

Effects of MgO Barrier Thickness on Magnetic Anisotropy Energy Constant in Perpendicular Magnetic Tunnel Junctions of (Co/Pd)$_{n}$/MgO/(Co/Pt)$_{n}$

Lee

et al. 2008

IEEE Trans. Magn.

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In this study, we report experimental results on perpendicular magnetic tunnel junctions composed of the binary multilayer Co/Pt and Co/Pd with various MgO barrier thicknesses. The coercivities of both Co/Pt and Co/Pd layers varied substantially with the MgO thickness. Very interestingly, the perpendicular anisotropy constant Ku of the Co/Pt multilayer measured by the extraordinary Hall effect oscillated with the MgO thickness, and the period of this oscillation was about 0.3 nm. Furthermore, both the Ku value and the oscillation amplitude decreased after annealing at 150 C and 200 C, which suggest that the oscillation may result from the film morphology.Index Terms-Extraordinary Hall effect (EHE), perpendicular anisotropy constant, perpendicular magnetic tunnel junctions (pMTJs).

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Perpendicular Magnetic Tunneling Junction With Double Barrier Layers for MRAM Application

Cited by 15 publications

References 6 publications

Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm

Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm

Perpendicular magnetic tunnel junction and its application in magnetic random access memory

Effects of MgO Barrier Thickness on Magnetic Anisotropy Energy Constant in Perpendicular Magnetic Tunnel Junctions of (Co/Pd)$_{n}$/MgO/(Co/Pt)$_{n}$

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