Phase composition of CuxS thin films: spectroscopic evidence of covellite formation

Bencistà, Ilaria; Benedetto, Francesco Di; Innocenti, Massimo; Luca, Antonio De; Fornaciai, Gabriele; Lavacchi, Alessandro; Montegrossi, Giordano; Oberhauser, Werner; Pardi, Luca; Romanelli, Marco; Vizza, Francesco; Foresti, Maria Luisa

doi:10.1127/0935-1221/2012/0024-2229

Cited by 12 publications

(16 citation statements)

References 15 publications

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“…XPS results confirmed the valence states of copper and sulfur as Cu(I) and S(ÀII), respectively, although a possible fraction of S(ÀI) in the form of disulfide anion was not excluded. The experimental Cu/S ratio observed in the XPS characterization was later attributed to the covellite phase, where positive holes allow Cu ions to be stabilized in their monovalent state [32]. The morphological analysis by AFM was able to evidence the low roughness values of the deposits, thus confirming the high homogeneity and good quality of the thin film obtained.…”

Section: E-ald Of Cds Zns Sn X S Y and Cu X Smentioning

confidence: 60%

“…The interest in cadmium, zinc, tin, and copper sulfides has increased in the last 10 years due to the possibility to fabricate ternary semiconductor compounds, thus allowing fine control over the band gap energy of solar cell devices [32][33][34]. E-ALD method has been successfully employed to grow ternary materials such as Cd x Zn 1-x S [35,36], Cu x Zn 1-x S [5] and Cu x Sn y S z [33].…”

Section: E-ald Of Ternary M X N 1-x Smentioning

confidence: 99%

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E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

Salvietti¹,

Giaccherini²,

Gambinossi³

et al. 2018

Semiconductors - Growth and Characterization

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Technological development in nanoelectronics and solar energy devices demands nanostructured surfaces with controlled geometries and composition. Electrochemical atomic layer deposition (E-ALD) is recognized as a valid alternative to vacuum and chemical bath depositions in terms of growth control, quality and performance of semiconducting systems, such as single 2D semiconductors and multilayered materials. This chapter is specific to the E-ALD of metal chalcogenides on Ag single crystals and highlights the electrochemistry for the layer-by-layer deposition of thin films through surface limited reactions (SLRs). Also discussed herein is the theoretical framework of the under potential deposition (UPD), whose thermodynamic treatment open questions to the correct interpretation of the experimental data. Careful design of the E-ALD process allows fine control over both thickness and composition of the deposited layers, thus tailoring the optoelectronic properties of semiconductor compounds. Specifically, the possibility to tune the band gap by varying either the number of deposition cycles or the growth sequence of ternary compounds paves the way toward the formation of advanced photovoltaic materials.

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Section: E-ald Of Cds Zns Sn X S Y and Cu X Smentioning

confidence: 60%

Section: E-ald Of Ternary M X N 1-x Smentioning

confidence: 99%

E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

Salvietti¹,

Giaccherini²,

Gambinossi³

et al. 2018

Semiconductors - Growth and Characterization

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“…Hence, one cannot easily distinguish the two phases by means of an analysis of the binding energy as measured with XPS. In fact, Cu(I) and Cu(II) have almost coincident energy in the XPS, while both sulfide and disulfide peaks have been found in the spectra [27]. Hence, on this basis, the assessment of the stoichiometry associated with the Cu 2 S cannot be safely discussed.…”

Section: Copper Sulfide (Cu 2 S)mentioning

confidence: 99%

Operando Structural Characterization of the E-ALD Process Ultra-Thin Films Growth

Giaccherini¹,

Felici²,

Innocenti³

2017

X-Ray Characterization of Nanostructured Energy Materials by Synchrotron Radiation

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Spanning from nanoelectronics to new solar energy materials, technological development in the recent years requested highly controlled nanostructured surfaces, ultra-thin films, and 2D structured materials. In general, although very favorable from a full life cycle assessment (FLCA) standpoint, electrodeposition hardly allows to obtain the high order required by recent technologies. In particular cases, the electrodeposition enables the deposition of atomic layers by means of surface limited reactions (SLRs). By exploiting SLRs, it is possible to define layer-by-layer deposition scheme of different atomic layers; we refer to these schemes as electrochemical atomic layer deposition (E-ALD) and when the growth of the film is epitaxial with the substrate, the techniques are called electrochemical atomic layer epitaxy (ECALE). Aiming at characterizing structure and growth of materials grown by means of E-ALD, surface analysis techniques apply better. In particular, surface X-ray diffraction (SXRD) with high brilliance synchrotron sources enables the operando structural analysis in electrochemical environment. In recent years, several works on the operando surface characterization by means of SXRD have been reported. Thanks to novelties in the field of operando SXRD experiments, semiconducting systems were studied, such as single and multilayer of CdS and Cu 2 S.

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“…Comparative materials were thus considered, in the attempt to achieve the best performance, without including toxic or rare elements in their bulk compositions. Ternary (kuramite, Cu 3 SnS 4 ) and quaternary (stannite, Cu 2 FeSnS 4 , and mainly, kesterite, Cu 2 ZnSnS 4 or CZTS) chalcogenides are attracting interest from worldwide researchers, because of their good performances with a relatively simple chemistry and to the absence of relevant economic or environmental concerns associated to their use in the solar cell production . The basic features exhibited by CZTS solar cells are the bandgap energy, predicted to be ~1.5 eV, and the absorption coefficient, ranging over 10 4 cm −1 .…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of ternary Cu_xSn_yS_z thin films for photovoltaic applications

Benedetto

Bencistà

Caporali

et al. 2013

Progress in Photovoltaics

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We exploited alternated electrodeposition of Cu, Sn and S to obtain Cu x Sn y S z thin films. These materials are kesterite-type chalcogenides that have attracted a relevant interest from worldwide researchers as low cost and high conversion efficiency solar cell devices. Films were grown on silver substrate, controlling the growth of the electrodeposited structures at the nanometric level. The obtained films were characterized by diffuse reflectance spectroscopy, voltammetric stripping and atomic force microscopy. Experimental bandgap energies resulted linearly modulated by changes of chemical composition and thickness. On the basis of these results, we candidate electrodeposition as a room temperature method to obtain thin films for solar cell technology with low energy investment and negligible environmental impact.

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Phase composition of CuxS thin films: spectroscopic evidence of covellite formation

Cited by 12 publications

References 15 publications

E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

Operando Structural Characterization of the E-ALD Process Ultra-Thin Films Growth

Electrodeposition of ternary Cu_xSn_yS_z thin films for photovoltaic applications

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Phase composition of CuxS thin films: spectroscopic evidence of covellite formation

Cited by 12 publications

References 15 publications

E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

Operando Structural Characterization of the E-ALD Process Ultra-Thin Films Growth

Electrodeposition of ternary CuxSnySz thin films for photovoltaic applications

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Electrodeposition of ternary Cu_xSn_yS_z thin films for photovoltaic applications