Phase-selective fluorescence of doped Ge2Sb2Te5 phase-change memory thin films

Abstract

In this Letter, new concepts of fluorescence phase-change materials and fluorescence phase-change multilevel recording are proposed. High-contrast fluorescence between the amorphous and crystalline states is achieved in nickel-or bismuth-doped Ge 2 Sb 2 Te 5 phase-change memory thin films. Opposite phase-selective fluorescence effects are observed when different doping ions are used. The fluorescence intensity is sensitive to the crystallization degree of the films. This characteristic can be applied in reconfigurable multi-state memory and other logic devices. It also has likely applications in display and data visualization.

Temperature dependent thermal conductivity and transition mechanism in amorphous and crystalline Sb2Te3 thin films

“…In these chalcogenide phase change materials, Ge-Sb-Te family 24,25 , such as Ge 2 Sb 2 Te 5 26 , Ge 1 Sb 2 Te 4 27 , and Ge 1 Sb 4 Te 7 28 , are the most popular chalcogenide phase change materials in actual applications. The typical Ge 2 Sb 2 Te 5 thin films have multi-functions 29 , such as super-resolution mask 30 , phase-selective florescence 31 and image lithography 32 .…”

Design and magneto‐optical characteristics of Ge–Sb–S–PbI2 chalcogenide glasses with a high Verdet constant

“…[1][2][3][4][5][6][7] Recently, ChGs have also attracted more attention as a kind of magneto-optical (MO) materials which are widely used in integrated optics and optical communication systems. [1][2][3][4][5][6][7] Recently, ChGs have also attracted more attention as a kind of magneto-optical (MO) materials which are widely used in integrated optics and optical communication systems.…”

“…As an important class of amorphous materials, chalcogenide glasses (ChGs) possess a variety of unique properties, such as a wide transparency in the infrared region, low maximum phonon energy and high nonlinear coefficient; thus, they have been widely used in infrared light transmission, phase-change memory, solar cell, sensor and mid-infrared fiber laser applications. [1][2][3][4][5][6][7] Recently, ChGs have also attracted more attention as a kind of magneto-optical (MO) materials which are widely used in integrated optics and optical communication systems. The most interesting feature of MO materials is their nonreciprocal characteristics; thus they can be used for fabricating nonreciprocal photonic devices such as shutter, isolator, and modulator.…”

Image lithography in telluride suboxide thin film through controlling “virtual” bandgap

“…Chalcogenide material, such as Ge 2 Sb 2 Te 5 and AgInSbTe, have been widely applied to data storage because of the obvious difference in electrical and optical reflectivity between its amorphous and crystalline states [9][10][11]. Chalcogenide thin films have been experimentally verified to be excellent inorganic resists through the etching selectivity between crystalline and amorphous states [12][13][14].…”