Phonon Scattering in Heat-Treated Cz-Silicon

IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

“…The gradually change of the morphology from plate-like to more spheroidal shapes with larger aspect ratio shifts the frequency to lower wavenumbers [88]. Remarkably however, the 1230 cm −1 band has not been detected in the spectra in a number of previous experimental works [32,37,71,87,[89][90][91]. It is important…”

“…Regarding thermal treatments, it has been observed [11,87,89,[93][94][95][96][97] that when the samples were subjected to long term pre-annealing treatments at low temperatures [11,[87][88][89][93][94][95] i.e. at ~ 750 °C or even lower temperatures [37,90,96] i.e.…”

“…In summary, when the samples are subjected to low temperatures pre-annealing treatment followed by a high temperature thermal anneal, the 1230 cm −1 band is generally not detected. Regarding carbon, previous works have shown [37,89,[93][94][95][96] that in carbon-doped Cz-Si samples subjected to various heat treatments the 1230 cm −1 was not observed. Carbon presence suppresses the formation of large size oxygen precipitates and favors the formation of higher density precipitates but of smaller size [93].…”