Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography

Park, Hyeong‐Ho; Choi, Dae‐Geun; Zhang, Xin; Jeon, Sohee; Park, Seong Je; Lee, Soon Won; Kim, Sarah; Kim, Ki Don; Choi, Jun Hyuk; Lee, Jihye; Yun, Dae Keun; Lee, Ki Joong; Park, Hyung Ho; Hill, Ross H.; Jeong, Jun Ho

doi:10.1039/b921343k

Cited by 42 publications

(23 citation statements)

References 28 publications

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“…Based on these early findings and our experimental results (see Figure S5) we argue that the specific metal coordination agents can indeed be converted efficiently to ZnO by UV light at very low temperatures. Although photolysis reactions induced by UV irradiation have been reported previously for various metalorganic precursors,37, 38 the present work is the first to explore the carbon‐free chemistry of the aqueous Zn(OH) x (NH 3 ) y (2–x)+ precursor solution and demonstrate high performance ZnO transistors at temperatures well below 100 °C.…”

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confidence: 99%

High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

et al. 2013

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An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm(2) /Vs at temperatures <180 °C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic.

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confidence: 99%

High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

et al. 2013

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“…for this system 19,25 and experimentally observed in other metal-carboxylate resist materials. 36,37 Based on the discussion below, we argue that this pathway can be described by the scheme in Fig. 9.…”

Section: Cross-linking Reaction Pathwaymentioning

confidence: 91%

Chemical Modification Mechanisms in Hybrid Hafnium Oxo-methacrylate Nanocluster Photoresists for Extreme Ultraviolet Patterning

et al. 2018

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The potential implementation of extreme ultraviolet (EUV) lithography into next generation device processing is bringing urgency to identify resist materials that optimize EUV lithographic performance. Inorganic/organic hybrid nanoparticles or clusters constitute a promising new class of materials, with high EUV sensitivity from the core and tunable chemistry through the coordinating ligands. Development of a thorough mechanistic understanding of the solubility switching reactions in these materials is an essential first step toward their implementation in patterning applications but remains challenging due to the complexity of their structures, limitations in EUV sources, and lack of rigorous in situ characterization. Here we report a mechanistic investigation of the solubility switching reactions in hybrid clusters comprised of a small HfOx core capped with a methacrylic acid ligand shell (HfMAA). We show that EUV-induced reactions can be studied by performing in situ IR spectroscopy of electronirradiated films using a variable energy electron gun. Combining additional ex situ metrology, we track the chemical evolution of the material at each stage of a typical resist processing sequence. For instance, we find that a crosslinking reaction initiated by decarboxylation of the methacrylate ligands under electron irradiation constitutes the main solubility switching mechanism, although there are also chemical changes imparted by a typical the post application bake (PAB) step alone. Lastly, synchrotronbased IR microspectroscopy measurements of EUV-irradiated HfMAA films enable a comparison of reactions induced by EUV vs electron beam irradiation of the same resist material, yielding important insight into the use of electron beam irradiation as an experimental model for EUV exposure.

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“…Till date, such routes using metal-organics as lithography resists, have been employed for simple two-dimensional patterning of metals by direct write electron beam lithography1011 and micromolding1213. For large area patterning, nanoimprint lithography (NIL) is ideal14, although direct imprinting of metal patterns has not been attempted thus far; there are examples related to metal oxides using precursors such as metal methacrylates15 and alkoxides161718. These precursors require polymer additives to make them imprintable, and the latter once cross-linked, are difficult to get rid of unless heated to a higher temperature.…”

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Metal hierarchical patterning by direct nanoimprint lithography

Radha

Lim

Saifullah

et al. 2013

Sci Rep

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Three-dimensional hierarchical patterning of metals is of paramount importance in diverse fields involving photonics, controlling surface wettability and wearable electronics. Conventionally, this type of structuring is tedious and usually involves layer-by-layer lithographic patterning. Here, we describe a simple process of direct nanoimprint lithography using palladium benzylthiolate, a versatile metal-organic ink, which not only leads to the formation of hierarchical patterns but also is amenable to layer-by-layer stacking of the metal over large areas. The key to achieving such multi-faceted patterning is hysteretic melting of ink, enabling its shaping. It undergoes transformation to metallic palladium under gentle thermal conditions without affecting the integrity of the hierarchical patterns on micro- as well as nanoscale. A metallic rice leaf structure showing anisotropic wetting behavior and woodpile-like structures were thus fabricated. Furthermore, this method is extendable for transferring imprinted structures to a flexible substrate to make them robust enough to sustain numerous bending cycles.

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Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography

Cited by 42 publications

References 28 publications

High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Chemical Modification Mechanisms in Hybrid Hafnium Oxo-methacrylate Nanocluster Photoresists for Extreme Ultraviolet Patterning

Metal hierarchical patterning by direct nanoimprint lithography

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