Photocurrent amplification in Schottky photodiodes

Donald, David K.; Wang, S. Y.; Ranganath, Thanmayi; Newton, S. A.; Trutna, W. R.

doi:10.1063/1.97097

Cited by 8 publications

(1 citation statement)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This large value seems inconsistent with the MSM Schottky structure because ideal photovoltaic devices are not expected to exhibit gain. However, several reports already mentioned high photoconductivity gain in Schottky photodiodes, [14][15][16] and some models were proposed in order to explain such gain and its dependence on the bias. [17][18][19] A mechanism, based on the modification of the height of the Schottky barrier, 19 will be suggested later in order to explain the gain in our MSM Schottky devices.…”

Section: Large Deep-ultraviolet Photocurrent In Metal-semiconductor-mmentioning

confidence: 99%

Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond

Alvarez¹,

Liao²,

Koide³

2005

Applied Physics Letters

View full text Add to dashboard Cite

Metal-semiconductor-metal planar devices have been fabricated on as-grown boron-doped homoepitaxial diamond thin films. They consist of two Schottky barriers connected back to back. The metal employed was a thin titanium (Ti) layer (5nm) followed by a gold (Au) cap layer (50nm), respectively. The structure shows a high ultraviolet photocurrent at 220nm, which is seven orders of magnitude higher than the reverse dark current (<1pA) for at least an applied voltage of ±0.4V. In addition, anomalous photoconductivity gain is observed. A plausible explanation could be the modification of the Schottky barrier under band-to-band illumination. The spectral photoresponse displays over six orders of magnitude discrimination between deep-ultraviolet (210nm) and visible light (630nm), and reveals a shoulder with an onset at 4.6eV.

show abstract

Section: Large Deep-ultraviolet Photocurrent In Metal-semiconductor-mmentioning

confidence: 99%

Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond

Alvarez¹,

Liao²,

Koide³

2005

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Color‐Selective and CMOS‐Compatible Photodetection Based on Aluminum Plasmonics

et al. 2014

View full text Add to dashboard Cite

A color-selective, band-engineered photodetector is demonstrated. The device uses two Schottky junctions to accumulate charge in an energy well, which results in photocurrent gain and a plasmonic aluminum grating for photocurrent enhancement and red-green-blue color selectivity. This work provides a more intelligent way to design imaging sensors by integrating amplifiers and color filters directly into pixels.

show abstract

Picometre displacement tracking of an optical beamin a siliconSchottky barrier sensor

O'Connor

Soãres

1994

Electron. Lett.

View full text Add to dashboard Cite

Photocurrent amplification in Schottky photodiodes

Cited by 8 publications

References 5 publications

Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond

Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond

Color‐Selective and CMOS‐Compatible Photodetection Based on Aluminum Plasmonics

Picometre displacement tracking of an optical beamin a siliconSchottky barrier sensor

Contact Info

Product

Resources

About