Photoluminescence recovery by <i>in-situ</i> exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

Shang, Chen; Lu, Yi; Kometani, Ryosuke; Ishikawa, Kenji; Kondo, Hiroki; Tokuda, Yutaka; Sekine, Makoto; Hori, Masaru

doi:10.1063/1.4729448

Cited by 13 publications

(12 citation statements)

References 21 publications

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“…However, above 400 C, de-passivation process started to dominate over passivation. Similarly, Jung et al 16 reported saturation of PL intensity upon increasing HPA exposure times in Si NCs embedded in SiO 2 matrix. In the aforementioned report, saturation of PL intensity was shown to depend on temperature, which was attributed to the balance of passivation and de-passivation processes.…”

Section: Resultsmentioning

confidence: 74%

Hydrogen plasma induced modification of photoluminescence from a-SiNx:H thin films

Bommali

Ghosh

Prakash

et al. 2014

Journal of Applied Physics

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Articles you may be interested inAccurate determination of optical bandgap and lattice parameters of Zn1-x Mg x O epitaxial films ( 0 ≤ x ≤ 0.3 ) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire A hydrogen storage layer on the surface of silicon nitride films Low temperature (250-350 C) hydrogen plasma annealing (HPA) treatments have been performed on amorphous hydrogenated silicon nitride (a-SiN x :H) thin films having a range of compositions and subsequent modification of photoluminescence (PL) is investigated. The PL spectral shape and peak positions for the as deposited films could be tuned with composition and excitation energies. HPA induced modification of PL of these films is found to depend on the N/Si ratio (x). Upon HPA, the PL spectra show an emergence of a red emission band for x 1, whereas an overall increase of intensity without change in the spectral shape is observed for x > 1. The emission observed in the Si rich films is attributed to nanoscale a-Si:H inclusions. The enhancement is maximum for off-stoichiometric films (x $ 1) and decreases as the compositions of a-Si (x ¼ 0) and a-Si 3 N 4 (x ¼ 1.33) are approached, implying high density of non-radiative defects around x ¼ 1. The diffusion of hydrogen in these films is also analyzed by Elastic Recoil Detection Analysis technique. V C 2014 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4864255] 053525-2Bommali et al.

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Section: Resultsmentioning

confidence: 74%

Hydrogen plasma induced modification of photoluminescence from a-SiNx:H thin films

Bommali

Ghosh

Prakash

et al. 2014

Journal of Applied Physics

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“…The bridging of each nucleus was also presumably enhanced by the preferential etching of terminated nitrogen atoms on the nucleus surface. 27 When a nucleus encounters another nucleus after the growth, the chlorinated Ga-rich surface with a high surface energy promotes the agglomeration of these nuclei. The obliquely grown nucleus at 62° indicates a surface with the GaN(101̅1) direction, which was considered to be originated from the defects on the AlN surface.…”

Section: Results and Discussionmentioning

confidence: 99%

“…From the XPS results, 21% of N atoms on the grown GaN surface were volatized with atomic hydrogen. The binding energy of Ga–H was reported to be 2.69–2.81 eV at room temperature; however, the energy should be limited at a high temperature of 600 °C due to the instability of the GaH x structure. The diffusion barrier of Ga atoms (0.3 eV) on a Ga-terminated GaN surface was reported from simulations based on the density functional theory .…”

Section: Results and Discussionmentioning

confidence: 99%

“…Nanoscale nuclei are formed initially, even in the presence of chlorine, as considered from the dislocations in the film with the same intervals as the nuclei diameters. The bridging of each nucleus was also presumably enhanced by the preferential etching of terminated nitrogen atoms on the nucleus surface . When a nucleus encounters another nucleus after the growth, the chlorinated Ga-rich surface with a high surface energy promotes the agglomeration of these nuclei.…”

Section: Results and Discussionmentioning

confidence: 99%

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Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources

et al. 2020

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The growth of sputtered GaN at low temperature is strongly desired to realize the dissemination of low-cost GaN high electron mobility transistor devices for next-generation communication technology. In this work, the roles of atomic nitrogen (N)/hydrogen (H) in GaN film growth on AlN/sapphire substrates by chemically assisted dual source sputtering are studied at a low growth temperature of 600 °C under a pressure of 2 Pa using vacuum ultraviolet absorption spectroscopy. The lateral growth was strongly enhanced with an appropriate H/N flux ratio of 1.9 at a GaN growth rate of ∼1 μm h –1 . X-ray photoelectron spectroscopy measurements indicated that N removal from the grown GaN surface by atomic hydrogen promoted the migration of Ga. A smooth GaN surface was achieved at a suitable N/Ga supply ratio of 53 and a H/N ratio of 1.9 with the addition of 0.5% chlorine to the Ar sputtering gas.

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“…Another key feature of atomic hydrogen is its ability to passivate native defects within the semiconductor (23,30,43). This attribute has also been exploited in GaN and GaAs to recover damage arising from dry etch processing through the passivation of etch-induced defects (44,45). This motivates an investigation of atomic hydrogen as a postetch treatment for the alleviation of etch-induced damage in In0.53Ga0.47As.…”

Section: Dry Etch Process Optimizationmentioning

confidence: 99%

(Invited) Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options

Peralagu

Ignatova

et al. 2015

ECS Trans.

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Based on current projections, III-Vs are expected to replace Si as the n-channel solution in FinFETs at the 7nm technology node. The realisation of III-V FinFETs entails top-down fabrication via dry etch techniques. Vertical fins in conjunction with high quality sidewall MOS interfaces are required for high-performance logic devices. This, however, is difficult to achieve with dry etching. Highly anisotropic etching required of vertical fins is concomitant with increased damage to the sidewalls, resulting in the quality of the sidewall MOS interface being compromised. In this work, we address this challenge in two stages by first undertaking a systematic investigation of dry etch processing for fin formation, with the aim of obtaining high resolution fins with vertical sidewalls and clean etch surfaces. In the second stage, dry etch process optimisation and post-etch sidewall passivation schemes are explored to mitigate the damage arising from anisotropic etching required for the realisation of vertical fins.

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Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

Cited by 13 publications

References 21 publications

Hydrogen plasma induced modification of photoluminescence from a-SiNx:H thin films

Hydrogen plasma induced modification of photoluminescence from a-SiNx:H thin films

Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources

(Invited) Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options

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