Photomodulated reflectance and transmittance: optical characterisation of novel semiconductor materials and device structures

Misiewicz, J.; Sęk, G.; Kudrawiec, R.; Sitarek, P.

doi:10.1016/j.tsf.2003.10.041

Cited by 73 publications

(90 citation statements)

References 17 publications

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“…The most popular technique, photoluminescence (PL), works best at low temperatures and yields mainly ground-state interband transitions. On the other hand, photomodulated reflectance (PR) spectroscopy [5], which is rarely used experimental method for checking of QD structures [6], uses laser pump source to periodically perturb sample dielectric function. The alternating component of the sample reflectance, which is subsequently measured, exhibits sharp derivative-like spectral features in the region of interband transitions.…”

Section: Introductionmentioning

confidence: 99%

Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Hazdra

Voves

Oswald

et al. 2008

Microelectronics Journal

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Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence in combination with photomodulated reflectance spectroscopy were used as the main characterisation methods for the growth optimisation. Results show that photoreflectance spectroscopy is an excellent tool for characterisation of QD structures wetting layers (thickness and composition) and for identification of spacers in vertically stacked QDs structures.

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Section: Introductionmentioning

confidence: 99%

Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Hazdra

Voves

Oswald

et al. 2008

Microelectronics Journal

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“…The noninvasive, absorption-like technique was utilized, namely photoreflectance (PR) within a bright configuration setup allowing for the detection of normalized changes in the reflectivity coefficient (∆R/R) with high sensitivity [10]. The emission properties of the QDs were investigated in a photoluminescence (PL) under nonresonant excitation at wavelength of 640 nm (1.937 eV) and photoluminescence excitation (PLE) experiments.…”

Section: Methodsmentioning

confidence: 99%

Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure

et al. 2016

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We investigate double layer InAs/GaAs quantum dots grown in the Stransky-Krastanov mode by molecular beam epitaxy. The sample consists of two layers of InAs quantum dots separated by 10 nm thick GaAs layer, where the top quantum dot layer of an improved homogeneity is covered by an InGaAs cap. This configuration has allowed for the extension of the dots' emission to longer wavelengths. We probed the carrier transfer between the states confined in a double quantum well composed of InGaAs cap and the quantum dots wetting layer to the states in the quantum dots by means of photoluminescence excitation and photoreflectance spectroscopies. Efficient emission from quantum dots excited at the double quantum well ground state energy was observed. There is also presented a discussion on the carrier injection efficiency from the capping layer to the quantum dots.

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“…It means that the amplitude of band bending modulation can be different for each layer of a complex semiconductor heterostructure. For some samples this amplitude can be effectively tuned by the wavelength of the modulation beam since in this way it is possible to change the quantity of photo−generated carriers in a given layer [65]. Such a possi− bility does not exist in CER spectroscopy.…”

Section: Contactless Electroreflectance Vs Photo--reflectancementioning

confidence: 99%

Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

Misiewicz

Kudrawiec

2012

Opto-Electronics Review

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The authors present the application of contactless electroreflectance (CER) spectroscopy to study optical transitions in low dimensional semiconductor structures including quantum wells (QWs), step-like QWs, quantum dots (QDs), quantum dashes (QDashes), QDs and QDashes embedded in a QW, and QDashes coupled with a QW. For QWs optical transitions between the ground and excited states as well as optical transitions in QW barriers and step-like barriers have been clearly observed in CER spectra. Energies of these transitions have been compared with theoretical calculations and in this way the band structure has been determined for the investigated QWs. For QD and QDash structures optical transitions in QDs and QDashes as well as optical transitions in the wetting layer have been identified. For QDs and QDashes surrounded by a QW, in addition to energies of QD and QDash transitions, energies of optical transitions in the surrounded QW have been measured and the band structure has been determined for the surrounded QW. Finally some differences, which can be observed in CER and photo-reflectance spectra, have been presented and discussed for selected QW and QD structures.

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Photomodulated reflectance and transmittance: optical characterisation of novel semiconductor materials and device structures

Cited by 73 publications

References 17 publications

Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure

Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

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