Photoresponsive properties of ultrathin silicon nanowires

Tran, Duy Phu; Macdonald, Thomas J.; Wolfrum, Bernhard; Stockmann, Regina; Nann, Thomas; Offenhäusser, Andreas; Thierry, Benjamin

doi:10.1063/1.4904089

Cited by 24 publications

(26 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An NIR photodetector was fabricated with vertical SiNW arrays that were covered with Au nanoparticles decorated graphene on the top of the vertical NWs. [229] In addition, metal/semiconductor vertical core-shell photodetectors such as Ag/Si [230] or Cu/Si [231] have been studied. Also, visible-toterahertz range detection was observed using reduced graphene oxide-SiNW heterostructure.…”

Section: Hybrid Sinw Photodetectorsmentioning

confidence: 99%

Hybrid Silicon Nanowire Devices and Their Functional Diversity

et al. 2019

View full text Add to dashboard Cite

In the pool of nanostructured materials, silicon nanostructures are known as conventionally used building blocks of commercially available electronic devices. Their application areas span from miniaturized elements of devices and circuits to ultrasensitive biosensors for diagnostics. In this Review, the current trends in the developments of silicon nanowire‐based devices are summarized, and their functionalities, novel architectures, and applications are discussed from the point of view of analog electronics, arisen from the ability of (bio)chemical gating of the carrier channel. Hybrid nanowire‐based devices are introduced and described as systems decorated by, e.g., organic complexes (biomolecules, polymers, and organic films), aimed to substantially extend their functionality, compared to traditional systems. Their functional diversity is explored considering their architecture as well as areas of their applications, outlining several groups of devices that benefit from the coatings. The first group is the biosensors that are able to represent label‐free assays thanks to the attached biological receptors. The second group is represented by devices for optoelectronics that acquire higher optical sensitivity or efficiency due to the specific photosensitive decoration of the nanowires. Finally, the so‐called new bioinspired neuromorphic devices are shown, which are aimed to mimic the functions of the biological cells, e.g., neurons and synapses.

show abstract

Section: Hybrid Sinw Photodetectorsmentioning

confidence: 99%

Hybrid Silicon Nanowire Devices and Their Functional Diversity

et al. 2019

View full text Add to dashboard Cite

show abstract

“…These substrates are used for opto-electronic applications as well [2,3]. Recently high sensitivity broad band opticaldetectors (UV to NIR) have been produced by fabricating micro and sub-micron width arrays on SOI wafers [4,5].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by oxygen ion implantation

Aggarwal

Ghatak

Kanjilal

et al. 2020

Materials Science and Engineering: B

View full text Add to dashboard Cite

The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). O + ions of energy 200 keV were implanted to a fluence of 1.9 x 10 18 ions-cm-2 and the implanted wafer was subjected to Rapid Thermal Annealing to 650 0 C. The resulting wafer has a topcrystalline Ge layer of ~ 220 nm thickness and Buried Oxide layer (BOX) layer of good quality crystalline GeO2 with thickness around 0.75µm. The crystalline GeO2 layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy, cross-sectional HRTEM with SAED and EDS established that the top Ge layer was recrystallized during annealing with faceted crystallites. The top layer (resistivity ≈32 ohm.cm) has a small tensile strain of around +0.4% and has estimated dislocation density of 2.7x10 7 cm-2. The thickness, crystallinity and electrical characteristics of the top layer and thequality of the BOX layer of GeO2 are such that it can be utilized for device fabrication.

show abstract

“…Silicon is considered to be optimal photoelectrode because of its low band gap, abundant availability in the earth’s crust and broad solar absorption spectrum leading to high solar energy conversion efficiency [4,5]. Nanostructured forms of silicon namely porous silicon (pSi) [6,7], pSi micro/nanoparticles [8,9,10] and silicon nanowires (SiNWs) [11,12,13] have demonstrated its potential in solar water splitting. The features demonstrating the potential of SiNWs includes the tunable band gap and antireflective surfaces [14,15,16,17,18,19,20,21,22].…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanowire Photocathodes for Photoelectrochemical Hydrogen Production

2016

Self Cite

View full text Add to dashboard Cite

The performance of silicon for water oxidation and hydrogen production can be improved by exploiting the antireflective properties of nanostructured silicon substrates. In this work, silicon nanowires were fabricated by metal-assisted electroless etching of silicon. An enhanced photocurrent density of −17 mA/cm2 was observed for the silicon nanowires coated with an iron sulphur carbonyl catalyst when compared to bare silicon nanowires (−5 mA/cm2). A substantial amount of 315 µmol/h hydrogen gas was produced at low bias potentials for the silicon nanowires coated with an iron sulphur carbonyl catalyst.

show abstract

Photoresponsive properties of ultrathin silicon nanowires

Abstract: Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques

Cited by 24 publications

References 36 publications

Hybrid Silicon Nanowire Devices and Their Functional Diversity

Hybrid Silicon Nanowire Devices and Their Functional Diversity

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by oxygen ion implantation

Silicon Nanowire Photocathodes for Photoelectrochemical Hydrogen Production

Contact Info

Product

Resources

About