Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

Fonder, Jean Baptiste; Chevalier, Laurence; Genevois, Cécile; Latry, Olivier; Duperrier, Cédric; Temçamani, Farid; Maanane, Hichame

doi:10.1016/j.microrel.2012.06.053

Cited by 15 publications

(6 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We present here a synthesis of results partially published elsewhere [10,11,13]. Physical analysis results complete our previous conclusions and show how the thermal constraint deteriorates aged devices.…”

Section: Physical Analysissupporting

confidence: 60%

See 1 more Smart Citation

Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

Temçamani¹,

Fonder²,

Latry³

et al. 2016

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Failure mechanisms in AlGaN/GaN HEMT RF power amplifiers implemented on silicon substrate and envisaging radar operating conditions are investigated in this paper. Several power amplifier prototypes have been designed, fabricated, characterized, and tested. Ageing tests were performed in conditions as close as possible to real applications. Ageing under increased drain voltage allowed studying both thermal and electrical aspects. Characterization performed before and after ageing tests proved that ageing process is mainly due to thermal stress for the irreversible part and to trapping effects for the reversible one, respectively. This was confirmed by additional physical analysis, the results revealing strong changes of the Schottky contact. Photons emission microscopy associated with X radiography gives spatial correlation between gate degradation and evolution of the brazing interface between the transistor chip and its packaging. It also illustrates the appearance of overheating points and acceleration of the Schottky contact degradation.

show abstract

Section: Physical Analysissupporting

confidence: 60%

“…Ni Ga Al N Au degradation of the Schottky contact (inter-metallic diffusion Au/Ni) [11]. The degradation is coherent with temperature (uniform degradations along the gate, more intense in the hot zones).…”

Section: Gatementioning

confidence: 92%

Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

Temçamani¹,

Fonder²,

Latry³

et al. 2016

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…Ensuring long term reliability and device lifetime are key requirements in many applications. Channel temperature is one of the main drivers of degradation in transistors, 2,3 in addition to other factors including electric fields. 4 Maximum power dissipation is often de-rated to keep the peak channel temperature within a safe working limit, ensuring reliability.…”

mentioning

confidence: 99%

Diamond micro-Raman thermometers for accurate gate temperature measurements

Simon

Pomeroy

Kuball

2014

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…However, the lack of reliability feedback is at the time being one of its major drawbacks. A variety of studies were conducted in order to address those reliability questions [2,3,4]. DC and step stress may be interesting in order to know exactly which parameter is important on a degradation mechanism [5,6,7] or with normalized tests like JEDEC in order to qualify a technology for foundries [8].…”

Section: Introductionmentioning

confidence: 99%

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

Divay

Duperrier

Temçamani

et al. 2016

Microelectronics Reliability

Self Cite

View full text Add to dashboard Cite

The reliability of RF AlGaN/GaN HEMT devices on SiC substrate is investigated here in pulsed RF condition at nominal and maximum rating drain quiescent bias. During these 3500 hours tests, high voltage especially during the RF pulse leads to a progressive decrease in g m and I DS S while trap concentration increases. These evolutions may be attributed to trap generation by hot carrier injection and highlight the importance of drain quiescent voltage as an important acceleration factor for this technology's reliability in pulsed RF conditions.

show abstract

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

Cited by 15 publications

References 11 publications

Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

Diamond micro-Raman thermometers for accurate gate temperature measurements

Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

Contact Info

Product

Resources

About