Physical origin of spontaneous interfacial alloying in immiscible W/Cu multilayers

Villain, P.; Goudeau, P.; Badawi, F.; Ouyang, Gang; Yang, Guo; Pélosin, V.

doi:10.1007/s10853-007-1605-y

Cited by 13 publications

(8 citation statements)

References 13 publications

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“…74,75 In stratified thin films, Ouyang et al obtained by molecular dynamic simulation an increase in copper atomic diffusion coefficient in tungsten sublayer as thickness, i.e., grain size decreases, 35,76 greatly enhancing the system solubility. 77 This phenomenon was confirmed experimentally by Villain et al 37 on W/Cu multilayers. Changes in tungsten surfaces state 78 lead to interfacial energy modification between tungsten and copper.…”

Section: Discussionmentioning

confidence: 58%

“…Copper abnormal diffusion has been previously observed for equinanometric thickness W/Cu multilayers. 35,37 Furthermore, energetic incident particle implantation during thin-film growth could also be involved in the solid-solution formation W͑Cu͒. The copper content inside tungsten sublayers can be estimated using a simple model developed for diluted solid solutions 55…”

Section: Stress Analysismentioning

confidence: 99%

“…Out of equilibrium states may be reached due to mixing effects resulting from ion implantation during thin-film growth 33 under energetic deposition process 34 and also to anomalous interfacial diffusion resulting from sizedependent diffusion coefficients. [35][36][37] Also, with PVD methods, the structure can be tailored using sequenced deposition.…”

Section: Introductionmentioning

confidence: 99%

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Copper coverage effect on tungsten crystallites texture development in W/Cu nanocomposite thin films

Girault¹,

Eyidi²,

Chauveau³

et al. 2011

Journal of Applied Physics

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Morphological and crystallographic structures of multilayered W/Cu nanocomposite thin films elaborated by physical vapor deposition were studied by varying copper and tungsten thicknesses. Sample examinations were performed by x-ray diffraction ͑XRD͒, grazing incidence small-angle x-ray scattering and transmission electron microscopy ͑TEM͒. Samples were found to be composed of copper nanoparticles, homogeneously dispersed in planes parallel to the film-substrate interface and periodically separated by tungsten layers along the growth direction. Our observations revealed an original texture development of the tungsten matrix from a mixture of unexpected ␣-W͗111͘ and ␣-W͗110͘ components to unique ␣-W͗110͘ component as the copper coverage passes a thickness threshold of 0.6 nm. Local TEM texture stereology investigations revealed simultaneous columnar growth of both preferential orientations posterior to polycrystalline development while XRD reveals strong compressive residual stresses in both texture components. Physical origins of the preferential crystallographic orientation evolution are discussed. Copper mono layers adsorption on W surfaces promotes surface energy anisotropy and diminution which is effective over the threshold. Below, the presence of a W͑Cu͒ solid solution which does not affect substantially the texture is revealed by the stress-free lattice parameter value extracted from XRD.

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Section: Discussionmentioning

confidence: 58%

Section: Stress Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Copper coverage effect on tungsten crystallites texture development in W/Cu nanocomposite thin films

Girault¹,

Eyidi²,

Chauveau³

et al. 2011

Journal of Applied Physics

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“…targets of pure W (99.95%) and Cu (99.99%) confocally arranged and operated at 200 W. The insertion of the Si 3 N 4 layer before W deposition prevents the formation of tungsten silicide observed when W is grown directly on the Si substrate. 21 Before insertion in the deposition apparatus, the sapphire substrates were ultrasonically cleaned using acetone and ethanol. Prior to deposition, possible surface contaminant on the a-Al 2 O 3 substrates (mostly adventitious carbon) was removed by Ar þ sputter cleaning for 5 min applying a RF bias of 100 V. First, a 25 nm-thick W buffer layer was deposited on the sputter-cleaned substrate.…”

Section: A Sample Preparationmentioning

confidence: 99%

The effect of thermal treatment on the stress state and evolving microstructure of Cu/W nano-multilayers

Cancellieri

Moszner

Chiodi

et al. 2016

Journal of Applied Physics

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The functionality and reliability of nano-multilayered devices and components are largely affected by the stress evolution during fabrication, processing, and operation. The impact of thermal treatment on the stress state and evolving microstructure of Cu/W nano-multilayers, as deposited on different substrates (i.e., Si(001), Al 2 O 3-C, and Al 2 O 3-R) by magnetron sputtering, was investigated by in-situ high temperature X-ray diffraction and high-resolution scanning electron microcopy. The as-deposited Cu and W nanolayers exhibit an out-of-plane orientation relationship according to Cu h111ijj W h110i. On the Al 2 O 3-C and Al 2 O 3-R substrates, the Cu/W nanomultilayers also develop a pronounced in-plane texture given by Cu f111gh10 1ijj W f110gh00 1i. The stress state of the Cu nanolayers in the as-deposited state and upon heating, investigated ex-situ, is largely imposed by the accumulated stresses in the much stiffer W nanolayers. In the as-deposited state, the W nanolayers exhibit a much larger in-plane compressive stress than the Cu nanolayers (i.e., À3.5 GPa versus À1.5 GPa), which both mainly originate from growth stresses generated during the deposition process. The growth stresses in the as-deposited Cu nanolayers are relaxed after annealing at 500 C. Relief of compressive stresses in the W nanolayers is accompanied by grain coarsening which only occurs upon degradation of the nano-multilayered structure. The degradation of the periodic layer structure proceeds in the range of 750 À 900 C and is independent of the substrate.

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“…After a thermal cycle, |σ Ni | is ∼10% lower and |σ Cu | is 40% lower. This may reflect dislocation-based plasticity, interdiffusion between layers, [32,33] or diffusion-mediated processes such as constrained diffusional creep observed in single-phase thin films. [15,34] Figure 4(a) and 4(b) shows σ Ni (T ) and σ Cu (T ), respectively, for the Cu-21 nm/Ni-21 nm sample, obtained from the four diffraction scans at each temperature.…”

Section: Abstract: Nanolaminates X-ray Diffraction Interface Propermentioning

confidence: 99%

X-Ray Diffraction Studies of Forward and Reverse Plastic Flow in Nanoscale Layers During Thermal Cycling

Gram

Carpenter

Payzant

et al. 2013

Materials Research Letters

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Physical origin of spontaneous interfacial alloying in immiscible W/Cu multilayers

Cited by 13 publications

References 13 publications

Copper coverage effect on tungsten crystallites texture development in W/Cu nanocomposite thin films

Copper coverage effect on tungsten crystallites texture development in W/Cu nanocomposite thin films

The effect of thermal treatment on the stress state and evolving microstructure of Cu/W nano-multilayers

X-Ray Diffraction Studies of Forward and Reverse Plastic Flow in Nanoscale Layers During Thermal Cycling

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