In this work, based on the advanced drift and diffusion model with commercial software, the Crosslight APSYS, InP/InGaAs separate absorption, grading, charge and multiplication APDs for high bit-rate operation have been modeled. Basic physical quantities such as band diagram, optical absorption and generation are calculated. Performance characteristics such as dark-and photo-current, photoresponsivity, multiplication gain, breakdown voltage, excess noise, frequency response and bandwidth etc., are simulated. The modeling results are selectively presented, analyzed, and some results are compared with experiments. Device design optimization issues are further discussed with respect to the applicable features of the Crosslight APSYS within the framework of the drift-diffusion theory.1 Introduction As one of the front-end photodetectors for high sensitive optical receivers, InP/InGaAs avalanche photodiodes (APDs) play an important role for modern long haul and high bit-rate optical fiber communication systems. The practical InP/InGaAs APD based on the separate absorption, grading, charge and multiplication (SAGCM) structure [1, 2] is of particular importance with demonstrated performance such as high internal gain, improved reliability, low multiplication noise, high quantum efficiency, maximum unity-gain bandwidth, and high gain-bandwidth product [3][4][5][6], especially when the SAGCM structure unit is coupled with a resonant cavity [3,4] or integrated as waveguide APDs [5,6].Whereas technological development on APD fabrication has been advanced during the past years, better modeling methods and software, especially compact packages with full breadth, are increasingly demanded because of their advantages in saving the R&D time and cost and capability in optimizing device design. In this work, based on Crosslight's APSYS [7], dynamic drift-diffusion simulations have been performed on InP/InGaAs SAGCM APDs.