PIN diode modelling for simulation and development of high power limiter, digitally controlled phase shifter and high isolation SPDT switch

Nazir, Muhammad Umair; Kashif, Muhammad; Ahsan, Naveed; Malik, Zahid Yaqoob

doi:10.1109/ibcast.2013.6512197

Cited by 8 publications

(3 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The excellent characteristics of PIN diodes in terms of wider bandwidth, high-power handling capability and compactness in design make them the first choice as RF switches. Figure 3 and 4 show the PIN diode construction and its equivalent forward and reverse bias equivalent circuits [23,24].…”

Section: B Pin Diode Model and Inceptionmentioning

confidence: 99%

An Inset-Feed On-Chip Frequency Reconfigurable Patch Antenna Design with High Tuning Efficiency and Compatible Radome Structure for Broadband Wireless Applications

Verma

Yadava

Balodi³

2021

Scientia Iranica

View full text Add to dashboard Cite

A novel, dual edge-shaped frequency reconfigurable antenna with a highly compact size is proposed, using microstrip line-based inset-feed mechanism. Proposed antenna uses cost-effective ROGER substrate of 0.787 mm thickness. The tuning reconfigurability has been achieved using two PIN diode switches, placed on the patch surface. The On-Off switching combinations of the PIN diodes provide variations in the current distribution and thereby altering the resonant frequencies. The proposed antenna offers the resonating spectrum in the range of 3 GHz to 9 GHz approximately, with maximum tuning efficiency of 43 % at 6.5 GHz, covering majority of modern RF standards. The proposed patch antenna design radiates with a reasonably high gain of 2.3 dBi at 5.04 GHz, with effective bandwidth of 2800 MHz (maximum at 6.5 GHz). The proposed multiband antenna with radome structure (ABS material) has been investigated under high-frequency simulation environment of HPEEsof (ADS-Keysight Technologies) and 3d radiation pattern (far-field gain, directivity and power calculations) have been obtained using momentum and EMDS. The final implementation size (without radome structure) comes as 23 mm X 26 mm large (595 mm 2 ). The proposed design paves the way for wireless applications including WLAN and WiMAX communication with its uniform far-field radiation pattern.

show abstract

Section: B Pin Diode Model and Inceptionmentioning

confidence: 99%

An Inset-Feed On-Chip Frequency Reconfigurable Patch Antenna Design with High Tuning Efficiency and Compatible Radome Structure for Broadband Wireless Applications

Verma

Yadava

Balodi³

2021

Scientia Iranica

View full text Add to dashboard Cite

show abstract

“…In SPDT switch design, high isolation plays an important role in preventing unwanted leakage signal [26]. Furthermore, to increase the switch's isolation, researchers have reported different techniques such as series PIN diode with compensation parasitic capacitance [27], a lumped λ/4 transformer [8], hollow waveguide [12], resistive bias network [10], and other techniques reported in [28]. However, for the solution of discrete circuit design using standard discrete PIN diode packages, there are trade-offs in these high isolation techniques such as increasing the overall circuit size, a higher number of PIN diodes and a limited choice of lumped component values.…”

Section: Introductionmentioning

confidence: 99%

Selectable multiband isolation of single pole double throw switch using transmission line stub resonator for WiMAX and LTE applications

Zakaria

Shairi

2017

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

A selectable multiband isolation of single pole double throw (SPDT) switch with switchable transmission line stub resonators for applications of WiMAX and LTE in 2.3 and 3.5 GHz bands is presented. Two SPDT switches are presented. (Design 2) either allows selecting only one band while unselecting the other or selecting both of them. However, (Design 1) does not allow so. The transmission line stub resonator used in this design is an open stub resonator with quarter wave of the electrical length. By using a simple mathematical model, the theory of the transmission line stub resonator was discussed where it can be cascaded and resonated at centre frequencies of 2.3 and 3.5 GHz. Moreover, the cascaded transmission line stub resonators can be reconfigured between all‐pass and band‐stop responses using discrete PIN diodes. The key advantage of the proposed SPDT with switchable transmission line stub resonators is a multiband high isolation with a minimum number of PIN diodes. Therefore, the simulated and measured results showed the followings: <3 dB of insertion loss, >10 dB of return loss and >30 dB of multiband isolation in 2.3 and 3.5 GHz bands.

show abstract

“…Microwave limiters with compact size, planar configuration and high electrical performance are in great demand in radar system. However, compared with other microwave passive devices such as filters, duplexers and antennas, there were little reported work on microwave limiters in the past literature [4][5][6][7][8], especially for the balanced configurations. It is known that the balanced limiter circuit configuration has attractive merits of providing the absorptive load for the reflected power and improving the power capacity of the PIN diodes but suffers from relatively large size owing to two extra 3 dB microwave couplers.…”

mentioning

confidence: 99%

Miniaturised X‐band balanced microwave limiter based on thin film hybrid integrated circuit technology

Zhang

et al. 2016

Electron. lett.

View full text Add to dashboard Cite

On the basis of thin film hybrid integrated circuit technology, a miniaturised X‐band balanced microwave limiter with low insertion loss (IL), low spike and flat leakage power and short recovery time has been presented. The balanced circuit configuration improves the power capacity of the PIN diodes, provides the absorptive load for the reflected power and also effectively tackles the problem of suffering high incident power. The measured results show that the balanced microwave limiter could suffer a pulse with 150 W peak power and 3% duty ratio while the leakage power is <10 mW, and the small signal IL of the circuit is <1.4 dB in the frequency range from 8.8 to 9.8 GHz.

show abstract

PIN diode modelling for simulation and development of high power limiter, digitally controlled phase shifter and high isolation SPDT switch

Cited by 8 publications

References 1 publication

An Inset-Feed On-Chip Frequency Reconfigurable Patch Antenna Design with High Tuning Efficiency and Compatible Radome Structure for Broadband Wireless Applications

An Inset-Feed On-Chip Frequency Reconfigurable Patch Antenna Design with High Tuning Efficiency and Compatible Radome Structure for Broadband Wireless Applications

Selectable multiband isolation of single pole double throw switch using transmission line stub resonator for WiMAX and LTE applications

Miniaturised X‐band balanced microwave limiter based on thin film hybrid integrated circuit technology

Contact Info

Product

Resources

About